Semiconductor Package Layout With Regional Metal Density Control
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Solution Overview
Problem
Integration of multiple semiconductor devices in wafer-level packaging poses challenges due to complexities in interconnection and bonding processes, which affect the efficiency and yield of semiconductor devices in electronic apparatus.
Innovation Solution
The implementation of a hybrid bonding process with a wafer substrate and die, utilizing a dual damascene process for forming bonding vias and pads, and the use of a redistribution structure to alleviate RLC performance degradation by optimizing metal density and pattern density in different regions, allowing for efficient integration and testing of 3D packaging or 3DIC devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor devices are integrated in wafer-level packaging, then device integration is improved, but interconnection and bonding process complexity increases
Solution Approach 1:
The wafer substrate is divided into different regions (first region with higher metal density and second region with lower metal density) to segment the bonding process into distinct zones with different functional requirements, allowing complex interconnections to be organized into manageable segments
Solution Approach 2:
Different metal density characteristics are assigned to different regions of the wafer substrate - the first region has higher metal density for robust bonding, while the second region has lower metal density for reduced RLC degradation, enabling each region to be optimized for its specific function
2Ease of manufacture
If uniform metal density is used across the wafer substrate, then manufacturing simplicity is maintained, but RLC performance degradation occurs
Solution Approach 1:
The wafer substrate employs non-uniform metal density distribution with a first region having higher metal density for bonding reliability and a second region having lower metal density to minimize RLC performance degradation, with each region optimized for its specific functional requirement
Solution Approach 2:
The metal density parameter is varied across different regions of the wafer substrate - increased metal density in the first region for bonding strength and decreased metal density in the second region for reduced parasitic effects, optimizing both reliability and performance
3Strength
If high metal density is used throughout the wafer substrate, then bonding strength is improved, but RLC performance degradation increases
Solution Approach 1:
High metal density is localized to the first region where bonding strength is critical, while the second region maintains lower metal density to minimize RLC performance degradation, ensuring each area has the appropriate metal density for its function
Solution Approach 2:
The wafer substrate is segmented into a first region optimized for bonding (higher metal density) and a second region optimized for electrical performance (lower metal density), allowing bonding strength and RLC performance to be independently optimized in their respective zones
Data Source
AI summary
A package has a first region and a second region surrounded by the first region. The package includes a first die, a second die, an encapsulant, and an inductor. The first die extends from the first region to the second region. The second die is bonded to the first die and is located within a span of the first die. The encapsulant is aside the second die. At least a portion of the encapsulant is located in the second region. The inductor is located in the second region. The inductor laterally has an offset from the second die. A metal density in the first region is greater than a metal density in the second region.