Semiconductor Package Structure Using Rear-Side Stress Compensation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in warpage control techniques for semiconductor dies, which are essential for miniaturization, higher speed, greater bandwidth, lower power consumption, and reduced latency.
Innovation Solution
The implementation of warpage control patterns on the rear surface of semiconductor wafers, combined with hybrid bonding techniques between semiconductor dies and the wafer, helps to minimize warpage by counterbalancing thermal expansion of interconnect wirings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If repeated reductions in minimum feature size are implemented to improve integration density, then more components can be integrated into a given area, but warpage control becomes more difficult
Solution Approach 1:
The patent applies local quality by forming warpage control patterns (such as stress compensation patterns or dummy patterns) at specific locations on the semiconductor wafer, particularly on the rear surface. These patterns have different material properties or geometries compared to the surrounding areas, creating localized stress distribution that compensates for warpage. This allows the bulk of the wafer to maintain high integration density while specific regions provide warpage control functionality.
Solution Approach 2:
The patent utilizes parameter changes by modifying the physical and chemical properties of the wafer structure. This includes changing the thickness of the wafer, adding layers with different thermal expansion coefficients, or introducing stress-induced patterns that alter the mechanical properties. By adjusting these parameters, the patent achieves both high integration density and effective warpage control.
2Speed
If miniaturization is pursued to achieve higher speed and greater bandwidth, then performance improves, but structural integrity and warpage control become more challenging
Solution Approach 1:
The patent applies preliminary action by forming warpage control patterns on the rear surface of the semiconductor wafer before the wafer is processed further or before components are mounted. This pre-established stress compensation structure proactively counteracts warpage that would otherwise develop during subsequent processing or operation, thereby maintaining structural integrity even as device dimensions are reduced for higher speed performance.
3Manufacturing precision
If continuous improvements in integration density are made, then more components are integrated, but thermal stress and warpage increase
Solution Approach 1:
The patent converts the harmful thermal stress that increases with higher integration density into a beneficial effect. By introducing warpage control patterns with specific material properties or geometries, the patent creates controlled stress regions that counterbalance the unwanted thermal stress from dense component integration. The harmful thermal expansion is thus transformed into a useful stress compensation mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively controls and minimizes warpage of semiconductor wafers, enhancing the reliability and performance of semiconductor components by maintaining structural integrity and reducing thermal stress.
Implementation Method 1
The warpage control pattern is disposed on and partially covers a rear surface of the first semiconductor die. The warpage control pattern helps to minimize warpage by counterbalancing thermal expansion of interconnect wirings.
Implementation Method 2
The warpage control pattern helps to minimize warpage by counterbalancing thermal expansion of interconnect wirings, reducing thermal stress.
Data Source
AI summary
A semiconductor device including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a warpage control pattern is provided. The first semiconductor die includes an active surface and a rear surface opposite to the active surface. The second semiconductor die is disposed on the active surface of the first semiconductor die. The insulating encapsulation is disposed on the active surface of the first semiconductor die and laterally encapsulates the second semiconductor die. The warpage control pattern is disposed on and partially covers the rear surface of the first semiconductor die.