Package Substrate Thermal Layers for Low-Profile Die Cooling
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Solution Overview
Problem
Existing semiconductor device assemblies face challenges in managing heat generated by semiconductor dies, particularly in space-constrained environments, where traditional heat-radiating structures contribute to increased package height and reduced thermal performance.
Innovation Solution
Incorporating one or more layers of thermally conductive material with high in-plane thermal conductivity into or on the package substrate, configured to conduct heat laterally outward toward the substrate's edges, thereby enhancing thermal dissipation and reducing package height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional heat-radiating structures are used, then heat dissipation is achieved, but package height increases and thermal performance decreases
Solution Approach 1:
The patent transitions from vertical heat dissipation (requiring tall heat sinks extending upward) to lateral heat conduction through the substrate plane. By embedding thermally conductive materials within the substrate and conducting heat laterally to edge heat sinks, the solution eliminates the need for vertical expansion while maintaining effective heat dissipation.
Solution Approach 2:
The patent introduces thermally conductive intermediate materials (such as diamond, cubic boron nitride, or metal interlayers) between the semiconductor die and substrate, and within the substrate itself. These intermediary materials serve as thermal conduits to transport heat laterally through the substrate to edge-mounted heat sinks, resolving the contradiction between compact packaging and effective thermal management.
2Productivity
If the number of semiconductor devices and power density increase, then processing capability improves, but heat generation increases and thermal management becomes more difficult
Solution Approach 1:
The patent changes the thermal conductivity parameter of the substrate by incorporating high-performance thermally conductive materials with conductivities exceeding 100 W/mK (such as diamond, cubic boron nitride, or metal interlayers). This parameter change enables the substrate to efficiently conduct laterally generated heat away from high-power-density device regions, supporting increased processing capability without thermal management degradation.
Solution Approach 2:
The patent implements a two-dimensional thermal conduction pathway through the substrate plane, allowing heat from multiple high-density devices to be conducted laterally to edge heat sinks. This lateral thermal management approach in the substrate plane enables higher device density and power density while maintaining effective heat dissipation.
3Temperature
If heat is conducted laterally through the substrate, then thermal performance improves and package height is reduced, but substrate material requirements become more stringent
Solution Approach 1:
The patent employs composite substrate structures combining different materials with complementary properties. Examples include metal interlayers (copper, aluminum, tungsten) embedded in dielectric substrates, or diamond/cubic boron nitride thermal management layers integrated with standard semiconductor substrates. These composite structures achieve the required high thermal conductivity while maintaining compatibility with existing manufacturing processes.
Solution Approach 2:
The patent applies high-thermal-conductivity materials locally where needed rather than requiring the entire substrate to have exceptional thermal properties. Thermally conductive interlayers are placed specifically at thermal pathways between devices and edge heat sinks, or thermal management materials are applied only in regions requiring enhanced heat conduction. This localized approach achieves improved thermal performance with minimal impact on manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of thermally conductive layers improves the thermal performance and reliability of semiconductor device assemblies by effectively dissipating heat generated by semiconductor dies over a wider area, even in space-constrained environments.
Implementation Method 1
Incorporating one or more layers of thermally conductive material with high in-plane thermal conductivity into or on the package substrate, configured to conduct heat laterally outward toward the substrate's edges
Data Source
AI summary
Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.