Package Substrate Embedding for High-Density Through-Hole Layouts
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Solution Overview
Problem
Existing methods for embedding discrete components in package substrates face limitations in flexibility and scalability, particularly with air core inductors and magnetic core inductors, which result in low inductance values for thin packages and coarse plated through-hole pitches, leading to impractical component thickness constraints and manufacturing complexities.
Innovation Solution
A method that increases plated through-hole density by positioning components within a substrate with a lower pitch, allowing for embedding components of varying dimensions and thicknesses without using a cavity drill, and enabling multiple layers, thus enhancing flexibility and scalability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If air core inductors or magnetic core inductors are used to meet power delivery demands, then power delivery capability is improved, but plated through-hole pitch becomes coarse and component thickness constraints become impractical
Solution Approach 1:
The component is embedded within the substrate by nesting it between dielectric layers and sealing it with conductive material, creating a nested structure that allows high density placement without coarse pitch constraints
Solution Approach 2:
The invention transitions from planar surface mounting to three-dimensional embedding within the substrate, utilizing the vertical dimension to achieve higher density and eliminate pitch-related constraints
2Adaptability or versatility
If conventional embedding methods are used, then discrete components can be embedded in package substrate, but flexibility and scalability are limited
Solution Approach 1:
The embedding method is designed to be universal, accommodating components of varying dimensions and thicknesses through a standardized process that uses the component's own dimensions to define cavity parameters, eliminating the need for custom processes for each component type
Solution Approach 2:
The invention changes the parameters of the embedding process dynamically based on component dimensions, using the component's thickness to determine cavity depth and adjusting dielectric layer thicknesses accordingly, enabling scalability across different component sizes
3Power
If plated through-hole density is increased, then power delivery capability is improved, but manufacturing complexity increases with conventional methods
Solution Approach 1:
The component is positioned on plated through-holes before the dielectric layers are fully formed and cured, allowing the plated through-holes to be created in advance at high density without requiring complex post-processing or cavity drilling operations
Solution Approach 2:
Instead of creating cavities after forming dielectric layers to embed components, the invention inverts the sequence by positioning components first and then forming dielectric layers around them, eliminating the need for complex cavity drilling and mixed dielectric material processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves a high plated through-hole density with a reduced pitch, allows for embedding components of different dimensions and thicknesses, and simplifies the manufacturing process by eliminating the need for a cavity drill and mixed dielectric materials, resulting in more efficient semiconductor device package design.
Implementation Method 1
depositing conductive material in the cavity to form a second plated through-hole on the second surface of the component
Data Source
AI summary
A disclosed method can include (i) positioning a first surface of a component of a semiconductor device on a first plated through-hole, (ii) covering, with a layer of dielectric material, at least a second surface of the component that is opposite the first surface of the component, (iii) removing a portion of the layer of dielectric material covering the second surface of the component to form at least one cavity, and (iv) depositing conductive material in the cavity to form a second plated through-hole on the second surface of the component. Various other apparatuses, systems, and methods are also disclosed.