Embedded Package Substrate Reinforcement for Warpage Control
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Solution Overview
Problem
Existing packaging solutions for integrated circuits (ICs) face challenges in managing warpage due to coefficient of thermal expansion (CTE) mismatch between materials, leading to stress and reliability issues, with current methods being costly and increasing package height.
Innovation Solution
A package substrate with a reinforcement structure comprising flexible and rigid columns and channels within dielectric layers, customizable for specific configurations, to absorb deflections and increase stiffness, reducing warpage and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If external stiffeners are used to control warpage, then warpage control is improved, but package height increases and cost increases
Solution Approach 1:
The reinforcement structure is nested within the package substrate itself, with columns and channels embedded in the dielectric layers. This internal nesting eliminates the need for external stiffeners, controlling warpage without increasing package height.
Solution Approach 2:
The reinforcement structure transitions from external 3D stiffeners to internal 2D embedded columns and channels within the substrate layers. This dimensional change allows warpage control while maintaining a compact package profile.
2Stability of the object's composition
If external stiffeners are used to control warpage, then warpage control is improved, but manufacturing cost increases
Solution Approach 1:
The reinforcement structure is merged with the package substrate as an integrated component. The columns and channels are formed within the same dielectric layers that make up the substrate, eliminating the need for separate external stiffener components and reducing manufacturing steps.
Solution Approach 2:
The dielectric layers serve dual functions: as the insulating material for electrical routing and as the matrix for the reinforcement structure. This multi-functionality eliminates the need for additional reinforcement components, reducing cost.
3Adaptability or versatility
If CTE mismatch is present between materials, then material selection flexibility is improved, but warpage and stress increase
Solution Approach 1:
The reinforcement structure converts the harmful effect of CTE mismatch-induced warpage into a beneficial design parameter. By embedding columns and channels within the dielectric layers, the structure absorbs and distributes thermal stresses, transforming the problem of material incompatibility into an opportunity for integrated stress management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reinforcement structure effectively controls warpage, improves assembly handling, enhances reliability, and reduces the risk of chip cracks and interconnect failures, while potentially lowering packaging costs by eliminating external stiffeners.
Implementation Method 1
a reinforcement structure (104) comprising columns (106) extending through the plurality of layers and the routing layers. The reinforcement structure (104) increases the stiffness of the package substrate (102) and absorbs deflections
Implementation Method 2
warpage arising out of mismatch in coefficient of thermal expansion (CTE) between the different materials used in the package
Data Source
AI summary
Embodiments of a microelectronic assembly comprise a package substrate, including: a first layer comprising a first plurality of mutually parallel channels of a first material; a second layer comprising columns of the first material; and a third layer comprising a second plurality of mutually parallel channels of the first material. The second layer is between the first layer and the third layer, at least some columns extend between and contact the first plurality of mutually parallel channels and the second plurality of mutually parallel channels, and at least a portion of the first layer, the second layer, and the third layer comprises a second material different from the first material.


