Package Structure with TIVs and EMI Shielding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current wafer level packaging methods face challenges in efficiently integrating multiple semiconductor dies and providing effective electromagnetic interference shielding while maintaining a compact form factor and low manufacturing costs.
Innovation Solution
The method involves forming through interlayer vias (TIVs) on a carrier coated with a debond layer, molding semiconductor dies and TIVs in a compound, creating a redistribution layer, and applying an electromagnetic interference shielding layer, which allows for efficient die integration and shielding without excessive space or cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor dies are integrated at wafer level, then productivity and cost-effectiveness are improved, but electromagnetic interference shielding becomes more difficult to implement effectively
Solution Approach 1:
The package structure is segmented into multiple functional layers including a carrier substrate, molding compound encapsulating the dies, and a separate electromagnetic interference shielding layer. This segmentation allows each layer to perform its specific function independently while maintaining overall system efficiency.
Solution Approach 2:
An electromagnetic interference shielding layer is introduced as an intermediary component between the semiconductor dies and the external environment. This shielding layer acts as a mediator that blocks electromagnetic interference from affecting the integrated dies while allowing the wafer-level integration process to continue.
2Reliability
If electromagnetic interference shielding is added to protect semiconductor dies, then reliability is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The electromagnetic interference shielding layer is merged with the molding compound encapsulation process. The shielding material is incorporated into the molding compound or applied as an integral part of the encapsulation structure, combining two functions (protection and shielding) into a single integrated component.
Solution Approach 2:
The molding compound serves multiple functions: it encapsulates the semiconductor dies for mechanical protection, provides structural support, and when combined with or integrated with the shielding layer, also provides electromagnetic interference protection. This multi-functionality reduces the need for separate dedicated components.
3Reliability
If through interlayer vias are formed on carrier to enable die integration, then electrical connectivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The through interlayer vias are formed on the carrier substrate before the semiconductor dies are attached and encapsulated. This preliminary formation of vias allows for precise positioning and alignment to be established early in the manufacturing process, before subsequent steps may complicate the alignment requirements.
Data Source
AI summary
A package structure has first and second dies, a molding compound, a first redistribution layer, at least one first through interlayer via (TIV), second through interlayer vias (TIVs), an electromagnetic interference shielding layer and conductive elements. The first die is molded in the molding compound. The second die is disposed on the molding compound. The first redistribution layer is located between the conductive elements and the molding compound and electrically connected to the first and second dies. The molding compound is located between the second die and the first redistribution layer. The first and second TIVs are molded in the molding compound and electrically connected to the first redistribution layer. The second TIVs are located between the first die and the first TIV. The electromagnetic interference shielding layer is in contact with the first TIV. The conductive elements are connected to the first redistribution layer.