Semiconductor Package Trench Cutting to Prevent Resin Delamination
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Solution Overview
Problem
Existing methods for manufacturing semiconductor packages face challenges in cutting both the insulating resin layer and the resin portion containing inorganic fillers simultaneously, leading to potential damage or delamination due to differing physical properties.
Innovation Solution
A method involving the preparation of an intermediate structure with a redistribution layer and a resin portion, where the resin portion is cut along a trench while using cutting conditions suitable for its hardness, while the insulating resin layer is protected, and additional sealing resin layers are used to seal and protect the relay wiring and semiconductor components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If cutting is performed on both the insulating resin layer and the resin portion containing inorganic fillers simultaneously using the same method, then the cutting process is simplified, but damage or delamination occurs due to different physical properties
Solution Approach 1:
The patent divides the cutting process into two separate stages: first cutting the resin portion containing inorganic fillers to form through-holes, then cutting the insulating resin layer along trenches. This segmentation allows each material to be cut with optimized parameters, preventing damage while maintaining manufacturing efficiency.
Solution Approach 2:
The resin portion is cut first to form through-holes before the insulating resin layer is cut. This preliminary action creates a structure where subsequent trench cutting in the insulating resin layer does not cause delamination, as the through-holes are already established and the trench depth is controlled to stop before reaching the through-holes.
2Manufacturing precision
If a cutting method suitable for the hard resin portion is used, then the resin portion can be cut effectively, but delamination or damage occurs to the insulating resin layer
Solution Approach 1:
The resin portion is cut first to form through-holes with precise depth control, creating a buffer structure. Subsequently, the insulating resin layer is cut along trenches that stop before reaching the through-holes, preventing delamination while maintaining cutting precision for the hard resin portion.
Solution Approach 2:
The through-holes formed in the resin portion act as an intermediary structure between the resin portion and the insulating resin layer. This intermediary structure allows the trench cutting in the insulating resin layer to proceed without causing delamination, as the trench depth is controlled to maintain a gap from the through-holes.
3Manufacturing precision
If the trench depth is increased to fully expose the through portion, then complete separation is achieved, but the insulating resin layer becomes vulnerable to damage
Solution Approach 1:
The through-holes are formed first with precise depth control, establishing a reference structure. The subsequent trench cutting in the insulating resin layer is controlled to stop before reaching the through-holes, achieving sufficient exposure for separation while maintaining the structural integrity of the insulating resin layer.
Data Source
AI summary
A method for manufacturing a semiconductor package such as CoWoS-L, the method including: preparing an intermediate structure having a base material with a first main surface and a second main surface on the rear side of the first main surface, and a redistribution layer provided on the first main surface and having an insulating resin layer and wiring, the base material having a resin portion including a through portion that penetrates from the first main surface to the second main surface, and the redistribution layer forming a trench having a bottom surface on which the through portion is exposed; and cutting the through portion along the trench, thereby forming a plurality of wiring structures having base materials divided.