Semiconductor Package Warpage Control Layer for Grounded Interconnects
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Solution Overview
Problem
Semiconductor packages face warpage issues due to materials with different coefficients of thermal expansion, which can lead to deformation during heating and cooling, necessitating effective warpage control.
Innovation Solution
Incorporating a warpage control layer, typically a conductive material like copper, between the molding and the insulating layer, with specific openings to expose the connection patterns, allowing for grounding and signal transmission while minimizing direct contact with the warpage control layer to reduce warpage and enhance integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a warpage control layer is added to reduce warpage, then warpage control improves, but device complexity increases
Solution Approach 1:
The warpage control layer is designed to serve multiple functions: it controls warpage during thermal processing, provides electrical grounding through direct contact with bump electrodes, and enables signal transmission through patterned regions. This multi-functionality reduces the need for separate grounding structures and vias, thereby limiting the increase in device complexity while achieving effective warpage control.
Solution Approach 2:
The warpage control layer features localized patterned regions with different properties: grounded regions that contact bump electrodes for warpage control and electrical grounding, and exposed regions that contact pad electrodes for signal transmission. This local differentiation allows the single layer to address multiple functional requirements without adding extensive structural complexity.
2Reliability
If openings are formed to expose connection patterns, then electrical connection improves, but manufacturing precision requirements increase
Solution Approach 1:
The warpage control layer is formed with patterned regions and openings before final bump electrode placement. This preliminary structuring establishes the grounding and signal transmission pathways in advance, allowing subsequent bump electrodes to be positioned relative to these pre-formed features. This sequencing reduces the precision burden on later alignment steps compared to forming all openings after chip placement.
3Stability of the object's composition
If the warpage control layer is grounded through bump electrodes, then warpage reduction improves, but the number of required electrodes increases
Solution Approach 1:
The bump electrodes serve dual purposes: they provide electrical connections for signal transmission to the semiconductor chip and simultaneously function as grounding points by contacting the grounded patterned regions of the warpage control layer. This eliminates the need for separate grounding electrodes, maintaining electrode quantity while achieving effective warpage control through electrical grounding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces warpage, improves signal characteristics, and simplifies the manufacturing process by grounding the warpage control layer without forming additional vias, resulting in a semiconductor package with enhanced electrical performance and manufacturing ease.
Implementation Method 1
a warpage control layer on the molding... The warpage control layer is grounded through a ground connection pattern
Implementation Method 2
The materials included in the semiconductor package may have different coefficients of thermal expansion (CTEs), and differences in CTE may cause deformation or warpage of the semiconductor package during the heating and cooling of the semiconductor package
Data Source
AI summary
A semiconductor package includes a package substrate, first and second bumps on a lower surface of the package substrate, a semiconductor chip on an upper surface of the package substrate, first and second connection patterns on the upper surface of the package substrate, a molding on the upper surface of the package substrate and covering the semiconductor chip, a warpage control layer on the molding, an upper insulating layer on the warpage control layer, a first opening passing through the upper insulating layer and exposing an upper surface of the warpage control layer, a second opening overlapping the first opening in a top view, the second opening passing through the warpage control layer and exposing the first connection pattern, and a third opening passing through the upper insulating layer and exposing the second connection pattern.