Package Structure With Variable Terminal Heights for Warpage Compensation

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Solution Overview

Problem

During the bonding of substrates onto wafers in system-on-integrated-substrate (SoIS) packages, joint defects such as cold joints or joint bridges can occur due to warpage behavior differences between the substrate and wafer, leading to reliability and yield issues.

Innovation Solution

The design of conductive terminals, solder resist openings, and connection pads between the substrate and wafer is modified, with conductive terminals having different heights in various regions to compensate for warpage, improving joint reliability and process yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If uniform conductive terminals are used across the substrate, then manufacturing simplicity is maintained, but warpage-induced joint defects occur reducing reliability

Engineering Contradiction:
Improvejoint reliabilityVSAvoidconductive terminal structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by varying the heights of conductive terminals in different regions of the substrate. Specifically, terminals in the first region have a first height, terminals in the second region have a second height, and terminals in the third region have a third height. This localized variation compensates for warpage differences across the substrate surface, improving joint reliability without requiring complete structural redesign.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements parameter changes by modifying the height parameter of conductive terminals based on their location. The different heights (first height, second height, third height) are designed to match the warpage profile of the substrate, allowing the bonding interface to maintain proper contact despite substrate deformation during bonding processes.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If substrate and wafer are bonded directly without compensation, then process simplicity is maintained, but warpage causes joint defects reducing yield

Engineering Contradiction:
Improveprocess yieldVSAvoidbonding structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-configuring conductive terminals with different heights before the bonding process. This advance preparation allows the terminals to compensate for anticipated warpage during bonding, preventing joint defects and improving process yield without adding complex real-time adjustment mechanisms.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If conductive terminals have different heights, then warpage compensation is achieved improving reliability, but manufacturing complexity increases

Engineering Contradiction:
Improvejoint reliabilityVSAvoidconductive terminal fabrication
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies segmentation by dividing the substrate into multiple regions (first region, second region, third region) with different warpage characteristics. Each region is assigned conductive terminals with appropriate heights, allowing independent optimization of each region while maintaining overall system reliability.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11810847B2Package structure and method of fabricating the same
Publication Date: 2023.11.07 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11810847B2 patent drawing
  • US11810847B2 patent drawing
  • US11810847B2 patent drawing

AI summary

A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.