Pad Electrode Oxide Sidewall Structure for Leakage Isolation
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Solution Overview
Problem
The reduction in space between pad electrodes in semiconductor devices leads to deteriorated insulating properties and increased leakage current due to residue and electromigration issues in conductive layers, compromising the reliability of semiconductor devices.
Innovation Solution
A semiconductor device with a conductive layer where an oxide layer is formed on the side surface of the first conductive film through oxidation, ensuring a width of 200 nm or more, which enhances the insulating properties and prevents leakage current by surrounding the conductive film with an oxide layer, barrier metal, and additional conductive films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the space between pad electrodes is reduced to ease design and reduce chip area, then the chip area is reduced, but the insulating property between conductive layers deteriorates and leakage current increases
Solution Approach 1:
The conductive layer is segmented into multiple parts: a first conductive film formed by plating, and a second conductive film formed by sputtering. This segmentation allows the first conductive film to provide low-resistance electrical connection while the second conductive film provides smooth surface and good adhesion, preventing leakage current even when pad electrode spacing is reduced
Solution Approach 2:
The conductive layer uses a composite structure combining different materials: the first conductive film uses a platable material (such as copper or aluminum) for low resistance, while the second conductive film uses a sputtered material (such as tungsten or titanium nitride) for smooth surface and adhesion. This composite material approach maintains insulating properties while enabling closer pad electrode spacing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxide layer effectively suppresses deformation due to electromigration and residue-related issues, improving the reliability of semiconductor devices by maintaining insulating properties and preventing leakage currents, even in closely spaced conductive layers.
Implementation Method 1
an oxide layer which is formed by oxidizing a material contained in the first conductive film is formed on a side surface of the first conductive film
Data Source
AI summary
A pad electrode is formed in an uppermost wiring layer of a multilayer wiring layer formed on a semiconductor substrate. A dielectric film is formed to cover the pad electrode. An opening portion is formed in the dielectric film so as to reach the pad electrode. In the opening portion, a conductive film that is a part of a conductive layer is electrically connected to the pad electrode. On a side surface of the conductive film, an oxide layer in which a material contained in the conductive film is oxidized is formed. A width of the oxide layer is 200 nm or more.