Semiconductor Pad Groove Isolation Ring for Leakage Control
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Solution Overview
Problem
Current semiconductor structures face performance issues due to parasitic capacitance and electric leakage from pad grooves, which affect electrical connections and probing processes.
Innovation Solution
Incorporating an isolation ring structure around pad grooves in the semiconductor substrate, extending through the substrate and dielectric layer, to isolate the pad groove from the pad structure and prevent parasitic capacitance and leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pad groove is formed in the substrate to enable electrical connection, then electrical connection capability is improved, but parasitic capacitance and electric leakage occur affecting performance
Solution Approach 1:
The substrate is divided into isolated regions by the isolation ring structure, which segments the pad groove area from the rest of the substrate. This segmentation prevents electrical interaction between the pad groove sidewall and the substrate, eliminating parasitic capacitance and electric leakage while maintaining electrical connection capability through the pad structure.
Solution Approach 2:
The isolation ring structure acts as an intermediary element between the pad groove and the substrate. It provides electrical isolation while allowing the pad structure to maintain its electrical connection function, thus mediating between the need for electrical connection and the need to eliminate parasitic effects.
2Reliability
If pad groove extends through substrate to dielectric layer for electrical connection, then electrical connection is enhanced, but sidewall leakage to substrate occurs
Solution Approach 1:
The harmful electrical interaction between the pad groove sidewall and the substrate is extracted and removed by introducing the isolation ring structure. This structure takes out the leakage path from the system, allowing the pad groove to extend through the substrate for enhanced electrical connection without suffering from sidewall leakage.
3Ease of manufacture
If conventional chip stacking is used without isolation structure, then manufacturing process is simpler, but parasitic capacitance affects performance
Solution Approach 1:
The isolation ring structure is merged with the pad groove formation process, where the isolation ring is formed as part of the same fabrication sequence. This merging approach maintains manufacturing simplicity while effectively preventing parasitic capacitance, thus improving performance without significantly complicating the manufacturing process.
Data Source
AI summary
The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a pad groove and a pad structure in the pad groove are formed in the first substrate and the first dielectric layer, and the pad groove extends through the first substrate along a direction from the first substrate to the first dielectric layer and extends into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the pad groove and extending through the first substrate along the direction from the first substrate to the first dielectric layer.