Conductive Pad Protrusion Deposition for Lower-Temperature Die Bonding
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Solution Overview
Problem
The semiconductor industry faces challenges in integrating smaller components with increasing complexity, requiring improvements in manufacturing processes that address the need for smaller package structures and higher integration density.
Innovation Solution
A semiconductor structure is developed with a conductive pad having a protrusion, where the protrusion is formed by deposition, allowing for hybrid bonding between dies with reduced annealing temperature and minimal increase in electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If electroplating process is used to form the protrusion, then the protrusion can be formed with larger grain size, but the annealing temperature must be increased which worsens the bonding reliability
Solution Approach 1:
The patent changes the formation process parameter from electroplating to deposition, which inherently produces smaller grain size. This parameter change allows the protrusion to be formed with fine grain structure that enables lower annealing temperature (below 400°C) while maintaining bonding reliability, thus resolving the contradiction between annealing temperature and bonding reliability
2Temperature
If deposition process is used to form the protrusion, then smaller grain size is achieved allowing lower annealing temperature, but the manufacturing process complexity increases
Solution Approach 1:
The patent merges the protrusion formation step with the existing deposition processes used in semiconductor manufacturing. By forming the protrusion using deposition material that is already part of the interconnect structure, the process leverages existing manufacturing capabilities and equipment, thereby minimizing the increase in manufacturing process complexity while achieving the desired lower annealing temperature
3Reliability
If the protrusion is made larger to ensure adequate contact area, then the bonding reliability improves, but the electrical resistance increases
Solution Approach 1:
The patent changes the grain size parameter of the protrusion material through deposition process control. The smaller grain size achieved through deposition (as opposed to electroplating) enables the protrusion to maintain low electrical resistance even at smaller dimensions, thus allowing adequate contact area for bonding reliability while keeping electrical resistance low
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure achieves improved reliability and overall structure by allowing for smaller grain size deposition and lower annealing temperatures, while maintaining low electrical resistance.
Implementation Method 1
the protrusion is formed by deposition
Data Source
AI summary
The present application provides a semiconductor structure having a conductive pad with a protrusion, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first die including a first substrate, a first dielectric layer over the first substrate, a first conductive pad at least partially exposed through the first dielectric layer, a first bonding layer over the first dielectric layer, and a first via extending through the first bonding layer and coupled to the first conductive pad; and a second die including a second bonding layer bonded to the first bonding layer, a second substrate over the second bonding layer, and a second via extending through the second substrate and the second bonding layer, wherein a first contact surface area between the first bonding layer and the second via is substantially greater than a second contact surface area between the first via and the second via.