Page Buffer Sensing Current Amplification for Low-Current Memory Cells
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Solution Overview
Problem
As the number of memory cells in a memory device increases, the cell current decreases, leading to degraded performance in sensing operations, necessitating the amplification of sensing current to maintain operational efficiency.
Innovation Solution
A memory device with a page buffer circuit that includes a sensing current amplification circuit, which generates an amplified current proportional to the cell current, applied to a sensing node through a series of transistors, enhancing the sensing current and improving sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of memory cells is increased, then the storage capacity is improved, but the cell current decreases leading to degraded sensing performance
Solution Approach 1:
A sensing current amplification circuit is introduced as an intermediary component between the memory cells and the sensing node. This amplification circuit receives the weak cell current and generates an amplified current that flows through the sensing node, thereby enabling accurate sensing despite the decreased cell current from increased memory cell stacks.
2Measurement precision
If the cell current is amplified to improve sensing sensitivity, then the sensing performance is improved, but the power consumption increases
Solution Approach 1:
The sensing current amplification circuit operates periodically during specific sensing periods rather than continuously. The circuit is activated only when sensing operations are required, allowing the memory device to achieve high sensing sensitivity when needed while minimizing power consumption during non-sensing periods.
Data Source
AI summary
Provided herein are a memory device and a sensing current amplification circuit. The memory device may include memory cells, a page buffer circuit connected to the memory cells through a bit line, and a control logic configured to control operations of the memory cells and the page buffer circuit. The page buffer circuit may include a sensing current amplification circuit connected to a sensing node that is connected to the bit line to which a cell current corresponding to the memory cells is applied. The sensing current amplification circuit may generate an amplified current corresponding to the cell current such that the amplified current flows on the sensing node.