CMP Polishing Solution for Palladium and Nickel Layers
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Solution Overview
Problem
Conventional CMP polishing liquids are ineffective in achieving a satisfactory polishing rate for palladium layers, and they also fail to adequately polish nickel and underlying metal layers such as ruthenium, tantalum, titanium, and cobalt layers, which are crucial for advanced semiconductor manufacturing processes like flip-chip mounting systems.
Innovation Solution
A CMP polishing liquid comprising a metal salt from Groups 8, 11, or 12, 1,2,4-triazole, a phosphorus acid, an oxidizing agent, and abrasive grains, specifically designed to improve the polishing rate for palladium, nickel, and underlying metal layers, with preferred components including hydrogen peroxide as the oxidizing agent and alumina or silica as abrasive grains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP polishing liquids are used, then the polishing process can be performed, but the polishing rate for palladium layers is insufficient
Solution Approach 1:
The patent changes the chemical parameters of the polishing liquid by introducing a complexing agent that forms soluble complexes with palladium ions, thereby significantly improving the polishing rate while maintaining polishing quality
Solution Approach 2:
The complexing agent acts as an intermediary substance that facilitates the removal of palladium by forming soluble complexes, enabling effective polishing without directly contacting and removing the metal layer
2Productivity
If conventional CMP polishing liquids are used, then the polishing process can be performed, but the polishing rate for nickel and underlying metal layers is insufficient
Solution Approach 1:
The polishing liquid is designed with multiple functional components that can simultaneously polish different metal layers (palladium, nickel, and underlying layers), making a single polishing step effective for multi-layer structures
Solution Approach 2:
The patent uses a composite formulation combining complexing agents, oxidizing agents, and abrasive particles, where each component contributes to polishing different aspects of the metal layers, achieving comprehensive polishing effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly enhances the polishing rate for palladium and nickel layers, while also ensuring satisfactory polishing of underlying metal layers like ruthenium, tantalum, titanium, and cobalt, facilitating more efficient semiconductor manufacturing processes.
Implementation Method 1
the metal layer surface is oxidized by the oxidizing agent to form an oxidation layer
Implementation Method 2
the metal layer is polished by shaving the oxidation layer with the solid abrasive
Data Source
AI summary
The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.