Panel ESD Protection Circuit With Double-Gate Leakage Suppression
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Solution Overview
Problem
Existing panel devices suffer from electrostatic discharge issues that cause leakage current, affecting the normal operation of pixel elements and potentially leading to abnormal functioning, especially when illuminated by visible light or X-rays.
Innovation Solution
Incorporation of an electrostatic protection component with a first and second double-gate transistor configuration, electrically connected to signal lines and a common electrode, effectively guiding electrostatic charges away to prevent large leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrostatic discharge components are disposed on the panel device to prevent electrostatic damage, then electrostatic protection is improved, but leakage current is generated when illuminated by visible light or X-rays, causing abnormal operation of pixel elements
Solution Approach 1:
The electrostatic protection component is divided into two separate transistors (first transistor and second transistor) connected in series between the signal line and common electrode. This segmentation allows each transistor to be independently optimized with appropriate gate control, reducing overall leakage current while maintaining ESD protection capability.
Solution Approach 2:
The patent changes the electrical parameters of the protection circuit by using transistors with specific threshold voltages and gate control mechanisms. By adjusting the gate voltages of the first and second transistors differently, the circuit achieves low leakage current in normal operation while maintaining high breakdown voltage for ESD protection.
2Object-affected harmful factors
If conventional electrostatic protection components are used, then electrostatic discharge protection is provided, but the leakage current affects the characteristics of thin-film transistors and pixel elements, causing abnormal operation
Solution Approach 1:
The patent introduces a common electrode as an intermediary element between the signal line and the pixel elements. The electrostatic protection components are configured to connect to this common electrode, which acts as a mediator to safely dissipate electrostatic charges while isolating the pixel elements from direct exposure to high leakage currents.
Solution Approach 2:
The protection circuit uses dynamically controllable transistors whose gate voltages can be adjusted during operation. This dynamic control allows the circuit to adapt its electrical characteristics, maintaining low leakage current under normal conditions while providing robust ESD protection when needed, thereby ensuring reliable pixel element operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces leakage current, ensuring the panel device operates properly under both normal conditions and when exposed to visible light or X-rays, thereby preventing abnormal pixel element operation.
Implementation Method 1
an electrostatic protection component including a first double-gate transistor and a second double-gate transistor... electrically connected to one of the plurality of signal lines... and a common electrode
Data Source
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AI summary
A panel device includes a substrate, a common electrode, and an electrostatic protection component. The substrate includes an active area and a peripheral area, the peripheral area is outside of the active area, and a plurality of signal lines is disposed on the substrate. The common electrode is disposed on the substrate, and at least part of the common electrode is disposed in the peripheral area. The electrostatic protection component is disposed in the peripheral area of the substrate and electrically connected to one of the plurality of signal lines and the common electrode, and the electrostatic protection component includes a first double-gate transistor. The first double-gate transistor includes a first gate, a second gate, a first electrode and a second electrode. The first gate is electrically connected to the first electrode, and the second gate is electrically connected to the second electrode.