Parallel ALD Valve Precursor Delivery for Faster Cyclic Deposition
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Solution Overview
Problem
Existing precursor delivery systems for atomic layer deposition (ALD) face challenges such as limited throughput, high maintenance requirements, and temperature compatibility issues, which affect the precision, reliability, and cost-effectiveness of thin film deposition processes.
Innovation Solution
The implementation of a thin film deposition system that utilizes two or more ALD valves connected in parallel to a common gas distribution plate, allowing for simultaneous or alternating actuation to increase the combined flow rate of precursors, reduce exposure time, and enhance pressure control within the deposition chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single ALD valve is used to deliver precursors, then the system complexity is low, but the throughput is limited and cycle duration is long
Solution Approach 1:
The precursor delivery system is segmented into multiple parallel ALD valves (at least two) that independently deliver precursors to the substrate. This segmentation allows simultaneous or alternating precursor delivery, increasing throughput while maintaining manageable system complexity through modular valve architecture
Solution Approach 2:
Multiple ALD valves are merged into a coordinated system with a single controller that manages their operation. The valves work in unison or alternation to deliver precursors, combining their individual flows to achieve higher throughput than a single valve could provide
2Productivity
If a single ALD valve is used, then the maintenance requirements are manageable, but the cycle duration is long and efficiency is low
Solution Approach 1:
The precursor delivery function is segmented across multiple valves, allowing the deposition process to proceed with higher efficiency. When one valve requires maintenance, the system can potentially continue operation with remaining valves or switch to alternating valve operation, reducing downtime
Solution Approach 2:
The system is designed to tolerate valve replacement or maintenance by having redundant valve capacity. If one valve needs maintenance, the system can recover by using the other valve(s) to maintain throughput, effectively discarding the problematic valve temporarily and recovering full capacity when it is replaced
3Productivity
If the precursor flow rate is increased to reduce cycle time, then the throughput improves, but the pressure control and uniformity become challenging
Solution Approach 1:
The total precursor flow required for high-speed deposition is segmented across multiple valves, allowing each valve to operate at moderate flow rates while collectively achieving high throughput. This segmentation maintains pressure control and uniformity by avoiding the need for any single valve to deliver excessively high flows
Solution Approach 2:
Multiple valves deliver precursors in a coordinated manner, with each valve contributing a portion of the total required flow. The controller manages the partial actions of individual valves to achieve the excessive flow rate needed for rapid deposition while maintaining precision through distributed delivery
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces the duration of ALD cycles, increases the flow rate of gases, and improves the uniformity and conformality of thin film deposition, thereby enhancing the overall efficiency and reducing maintenance needs of the ALD system.
Implementation Method 1
introducing a first one of the precursors into the thin film deposition chamber by independently actuating two or more first atomic layer deposition (ALD) valves
Implementation Method 2
connected in parallel to a common gas distribution plate for supplying the first one of the precursors into the thin film deposition chamber
Implementation Method 3
a thin film deposition system that utilizes two or more ALD valves connected in parallel to a common gas distribution plate, allowing for simultaneous or alternating actuation to increase the combined flow rate of precursors
Data Source
AI summary
The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a method of depositing a thin film comprises alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors. Exposing the substrate comprises introducing one of the precursors into the thin film deposition chamber through two or more atomic layer deposition (ALD) valves each configured to supply the one of the precursors.