Parallel ALD Valve Layout for Faster Precursor Delivery
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Solution Overview
Problem
Existing precursor delivery systems in atomic layer deposition (ALD) face challenges with throughput, speed, reliability, and maintenance due to limitations in valve parameters and wear, particularly when depositing thin films on high aspect-ratio structures.
Innovation Solution
A thin film deposition system using two or more atomic layer deposition (ALD) valves connected in parallel to a common gas distribution plate, allowing for simultaneous or overlapping activation to increase flow rate, reduce cycle duration, and minimize valve wear.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single ALD valve is used to deliver precursor, then the system is simple, but the throughput is limited and cycle time is long
Solution Approach 1:
The precursor delivery system is segmented into multiple parallel ALD valves (first ALD valve and second ALD valve) that can operate independently. This segmentation allows simultaneous or overlapping activation of multiple valves to deliver precursor at higher flow rates, thereby increasing deposition throughput while maintaining manageable system complexity through modular architecture
Solution Approach 2:
Multiple ALD valves are merged into a parallel configuration connected to a common gas distribution plate. This merging enables the combined flow capacity of multiple valves to be utilized simultaneously, achieving higher precursor delivery rates and improved throughput without proportionally increasing system complexity
2Productivity
If a single ALD valve is used, then the system is simple, but the cycle duration is long
Solution Approach 1:
The system employs periodic action by enabling overlapping activation patterns where the first ALD valve and second ALD valve can be activated in staggered or simultaneous periodic cycles. This allows continuous precursor delivery with reduced idle time between valve activations, shortening the overall cycle duration while maintaining controlled periodic operation
Solution Approach 2:
The parallel valve configuration enables continuity of useful action by allowing one valve to be activated while another is still delivering precursor or transitioning. This overlapping activation eliminates gaps in precursor delivery, maintaining continuous useful action throughout the deposition cycle and reducing total cycle time
3Productivity
If ALD valves are frequently actuated to increase throughput, then productivity improves, but valve wear increases and reliability decreases
Solution Approach 1:
The valve system is segmented into multiple independent ALD valves, allowing the workload to be distributed across several components. Each valve can be actuated less frequently since they share the total actuation requirements, thereby reducing individual valve wear and extending service life while maintaining high overall throughput through parallel operation
Solution Approach 2:
The system implements periodic action with alternating activation patterns where valves are cycled in a rotating sequence. This periodic alternation distributes the cumulative actuation stress evenly across multiple valves over time, preventing any single valve from experiencing excessive wear while maintaining continuous precursor delivery and high productivity
Data Source
AI summary
The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a method of depositing a thin film comprises alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors. Exposing the substrate comprises introducing one of the precursors into the thin film deposition chamber through two or more atomic layer deposition (ALD) valves each configured to supply the one of the precursors.