Parallel Diode Structures for High-Frequency Rectifier Input Loss
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Solution Overview
Problem
Conventional full-wave rectifier circuits with diodes experience increased input loss at high frequencies due to the finger structure's collector resistance and reverse recovery process, leading to reduced rectification characteristics.
Innovation Solution
The semiconductor device employs a diode structure where the P-type region is surrounded by the N-type region, connecting multiple first structures in parallel to form one diode, which maintains constant collector resistance and reduces input loss across varying frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional diode structures with finger configuration are used, then substrate current suppression is achieved, but rectification characteristic deteriorates at high frequencies due to increased collector resistance
Solution Approach 1:
The diode is divided into multiple first structures connected in parallel, where each structure contains a P-type region surrounded by N-type regions. This segmentation allows current to flow through multiple paths simultaneously, reducing the overall collector resistance while maintaining substrate current suppression through the triple-well configuration of each individual structure.
Solution Approach 2:
Multiple first structures are merged in parallel to form a single diode unit. The combining of multiple parallel paths reduces the equivalent collector resistance, thereby reducing input loss at high frequencies while each individual structure maintains the substrate current suppression capability through its triple-well structure.
2Loss of energy
If multiple diodes are connected in parallel to reduce collector resistance, then input loss decreases, but device complexity increases
Solution Approach 1:
Instead of connecting multiple separate diodes in parallel, the diode is segmented into multiple first structures that are integrated into a single unified device. This segmentation approach achieves the resistance reduction benefit of parallel connections while avoiding the complexity of multiple discrete components and their interconnections.
3Speed
If the frequency of input signal increases, then rectification speed improves, but rectification characteristic deteriorates due to reverse recovery process and collector resistance
Solution Approach 1:
The invention changes the structural parameters of the diode by surrounding the P-type region with N-type regions in each first structure. This parameter change reduces the collector resistance, allowing the diode to maintain good rectification characteristics at high frequencies where conventional diodes would suffer from excessive input loss due to their higher resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures sufficient current flow and suppresses input loss, maintaining excellent rectification characteristics regardless of the input signal frequency.
Implementation Method 1
The diode forming the full-wave rectifier circuit is structured through PN junction in a P-well formed in a P-type substrate
Implementation Method 2
with respect to a magnetic field supplied to an antenna formed of an inductance element such as a coil, the inductance element generates an induced current
Data Source
AI summary
One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first N-type region; a P-type region which is surrounded by the first N-type region; and a second N-type region which is surrounded by the P-type region. The first N-type region and the P-type region are wired, and the plurality of first structures are connected in parallel to form one diode.