Parallel Electrode Structure for Low-Inductance Insulation Reliability

The patent applies local quality by differentiating the treatment of electrode corners from the main electrode surfaces. Chamfered or burr parts are specifically formed at corner portions of the electrodes to prevent insulating material damage, while the rest of the electrode surfaces maintain their original properties for optimal electrical contact. This localized modification resolves the contradiction by protecting insulation at critical corners without compromising overall inductance performance.

The chamfered or burr parts are formed on electrode corners in advance during the electrode manufacturing process, before the insulating material is positioned between the electrodes. This preliminary action prevents potential damage to the insulating material during assembly and operation, allowing the electrodes to be placed close together for low inductance while maintaining insulation reliability.

Instead of modifying all electrode surfaces, the patent applies chamfering or burr formation only at corner portions. This localized approach maintains manufacturing simplicity for the majority of the electrode surface while providing targeted protection at corners where insulating material damage is most likely to occur during assembly and operation.

The patent converts the potentially harmful sharp corners of electrodes into beneficial chamfered or burr parts that protect the insulating material. By intentionally modifying the corner geometry, the electrode structure itself becomes protective rather than damaging, resolving the contradiction between manufacturing simplicity and insulation reliability.