Parallel Flash Memory Controller 2D Channel Row Architecture

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Solution Overview

Problem

Current flash memory devices face limitations in interface read/write rate, which restricts their application in high-capacity storage devices, and existing multi-channel controllers do not achieve true parallel operation, leading to inefficiencies and lower data transmission rates.

Innovation Solution

A 2D parallel flash memory controller that enables parallel operations across channels and rows, with instruction parsing units and flash memory control units working in tandem to execute instructions in parallel, increasing data bus bandwidth and allowing simultaneous operations across multiple flash memory chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multi-channel control is implemented with multiplexed control signal lines, then data bandwidth is increased, but working efficiency decreases due to inability to perform true parallel operations

Engineering Contradiction:
Improvedata bandwidthVSAvoidworking efficiency
Core Design Contradiction:
Quantity of substanceVSProductivity

Solution Approach 1:

The controller is divided into multiple independent control units, each capable of independently controlling a channel. This segmentation allows each control unit to operate autonomously without sharing control signal lines, enabling true parallel operations across multiple channels while maintaining high data bandwidth capacity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from 1D sequential control to 2D parallel control by organizing control units in a matrix structure with multiple rows and columns. This dimensional change enables simultaneous control of multiple channels through dedicated control paths, achieving both high bandwidth and high efficiency.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Speed

If interface read/write rate of flash memory chip is increased, then storage device performance improves, but device complexity increases

Engineering Contradiction:
Improveinterface read/write rateVSAvoidcontroller structure complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The controller is segmented into multiple independent control units, each handling a channel. This modular segmentation distributes the complexity across multiple simple units rather than requiring one complex centralized controller, enabling high read/write rates through parallel processing while keeping individual unit complexity manageable.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Each control unit is designed to be self-contained with independent instruction parsing and control capabilities. This self-service design allows each unit to operate autonomously without complex inter-unit coordination, simplifying the overall system architecture while achieving high throughput through parallel operations.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS8661188B2Parallel flash memory controller, chip and control method thereof
Publication Date: 2014.02.25 MEMORIGHT (WUHAN) CO LTD
  • US8661188B2 patent drawing
  • US8661188B2 patent drawing
  • US8661188B2 patent drawing

AI summary

A parallel flash memory controller, a chip, and a control method thereof are disclosed. First, an on-chip control bus sends flash memory control instructions in parallel to instruction parsing units (211) according to channels. Next, the instruction parsing units store (211) and parse the flash memory instructions corresponding to the flash memory channels, and sequentially send the flash memory control instruction to the flash memory control units (213). Then, the flash memory control units (213) send control instructions to the flash chips in the channels according to rows, and then the control instructions are processed in parallel in flash memory rows. In the present invention, the operations for each channel are performed independently in parallel, the flash memory control units (213) in the channels send the control instructions in series, and meanwhile, in each flash memory row, operations are concurrently performed in parallel. Therefore, the read/write rate of the flash memory is increased for many times, and the bottleneck in adopting flash memory chips to accomplish high-speed and large-capacity storage devices is effectively eliminated.