Parallel IGBT and MOSFET Semiconductor Module
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Solution Overview
Problem
Existing semiconductor modules face challenges in minimizing losses across both low-current and high-current regions due to the high manufacturing cost of wide-bandgap semiconductors and the bipolar effect of IGBTs, making it difficult to reduce overall module losses effectively.
Innovation Solution
A semiconductor module configuration featuring an IGBT made of silicon and a MOSFET made of a wide-bandgap semiconductor, connected in parallel, with the IGBT having a greater surface area than the MOSFET, allowing current to flow through the device with lower on-resistance in each region, thereby minimizing the MOSFET's surface area and reducing module losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the chip area of the MOSFET is increased to reduce loss in the low-current region, then the loss reduction effect is improved, but the manufacturing cost of the semiconductor module is increased
Solution Approach 1:
The patent applies local quality by making the MOSFET chip area locally optimized rather than uniformly large. The MOSFET is designed with a chip area specifically sized for low-current region operation, while the IGBT provides the necessary capacity for high-current regions. This localized optimization allows the MOSFET to have sufficient area for low-current performance without the entire module requiring excessive area that would drive up manufacturing costs.
2Loss of energy
If the chip area of the MOSFET is increased to reduce loss in the low-current region, then the loss reduction effect is improved, but the device complexity is increased
Solution Approach 1:
The patent applies local quality by making the MOSFET chip area locally optimized rather than uniformly large. The MOSFET is designed with a chip area specifically sized for low-current region operation, while the IGBT provides the necessary capacity for high-current regions. This localized optimization allows the MOSFET to have sufficient area for low-current performance without the entire module requiring excessive area that would drive up manufacturing costs.
3Loss of energy
If the MOSFET is used to reduce loss in the high-current region, then the loss reduction effect is improved, but the manufacturing cost is increased due to the need for larger MOSFET chip area
Solution Approach 1:
The patent applies parameter changes by utilizing the bipolar effect parameter of the IGBT, which becomes significant in high-current regions. The IGBT's bipolar effect reduces its on-resistance at high currents, making it suitable for handling high-current regions. This parameter change allows the system to achieve low loss in high-current regions without requiring a large MOSFET chip area, thereby avoiding increased manufacturing costs.
4Power
If a larger MOSFET chip area is used to handle high current, then the current handling capability is improved, but the manufacturing cost is increased
Solution Approach 1:
The patent applies parameter changes by utilizing the bipolar effect parameter of the IGBT, which becomes significant in high-current regions. The IGBT's bipolar effect reduces its on-resistance at high currents, making it suitable for handling high-current regions. This parameter change allows the system to achieve low loss in high-current regions without requiring a large MOSFET chip area, thereby avoiding increased manufacturing costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes manufacturing costs and reduces losses across the entire operating region by optimizing current flow through the semiconductor module, with the MOSFET handling low-currents and the IGBT handling high-currents, maintaining low losses even at elevated temperatures.
Implementation Method 1
The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT.
Implementation Method 2
In a high-current region, the bipolar effect of the IGBT becomes remarkable, lowering the on-resistance of the IGBT.
Implementation Method 3
The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region.
Data Source
AI summary
A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.