Parallel IGBT and MOSFET Modules for Size Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in reducing size and cost due to variations in operational properties between IGBT and MOSFET, leading to timing shifts and increased chip size, which complicates assembly and increases costs.
Innovation Solution
A semiconductor device configuration with a first power semiconductor module (IGBT) and a second power semiconductor module (MOSFET) connected in parallel, allowing for non-identical switching timings and reducing the size and cost by preventing MOSFET turn-on during IGBT off-state, and simplifying design and control through shared substrate and reduced wiring restrictions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the parasitic diode in the MOSFET is used as a freewheeling diode to prevent timing shifts, then the MOSFET can operate reliably, but the chip size and substrate area increase
Solution Approach 1:
The patent extracts the freewheeling diode function from the parasitic diode of the MOSFET and implements it as a separate external diode component. This allows the MOSFET to operate reliably with proper freewheeling capability while maintaining a smaller chip size, as the diode is no longer integrated into the MOSFET structure but rather connected externally to the parallel combination of IGBT and MOSFET.
2Adaptability or versatility
If a large number of discrete components are used in the discrete form, then design flexibility is improved, but assembly complexity and substrate wiring complexity increase
Solution Approach 1:
The patent merges the IGBT and MOSFET into a parallel configuration within a unified power semiconductor module structure. This integration reduces assembly complexity and substrate wiring complexity by consolidating multiple discrete components into a single module, while still maintaining design flexibility through the ability to selectively control each switching element.
3Reliability
If the MOSFET is designed with sufficient current capacity to handle timing shifts, then operational reliability is improved, but the chip size and substrate area increase
Solution Approach 1:
The patent introduces an external freewheeling diode as an intermediary component that handles the current during timing shifts and freewheeling operations. This allows the MOSFET to be designed with appropriate current capacity without excessive sizing, as the external diode provides a dedicated path for managing current during transition periods, thereby reducing the substrate area required.
Data Source
AI summary
Provided is a technique for reducing the size and cost of a semiconductor device. A semiconductor device includes an IGBT module having an IGBT, and a MOSFET module having a MOSFET whose operational property is different from that of the IGBT, the MOSFET module being connected to the IGBT module in parallel. The semiconductor device is capable of selectively executing an operation mode in which switching timing in the IGBT module and switching timing in the MOSFET module are non-identical.