Parallel Memristor Network Oxygen Vacancy Tuning

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Solution Overview

Problem

Memristors have not been widely utilized in commercial applications due to limitations in signal response modification and tuning, which hinders their integration into systems requiring specific electrical characteristics.

Innovation Solution

A system and method involving a memristor network with multiple memristor materials in parallel, where the oxygen vacancy transmission rate is controlled through physical or chemical modifications to achieve asymmetric time-based responses, allowing for real-time tuning and unique signal optimization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple different memristor materials are used in parallel, then the adaptability and versatility of the system is improved, but the device complexity increases

Engineering Contradiction:
Improvesignal response customizationVSAvoidmemristor network structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The system divides the memristor network into multiple parallel branches, each containing different memristor materials (e.g., first memristor material, second memristor material). This segmentation allows each material to contribute different electrical characteristics, enabling customized signal responses while maintaining a relatively simple overall parallel structure that avoids more complex series or feedback configurations.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If physical or chemical modifications are applied to control oxygen vacancy transmission rate, then the manufacturing precision is improved, but the ease of manufacture deteriorates

Engineering Contradiction:
Improveoxygen vacancy transmission rate controlVSAvoidphysical or chemical modification process
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent employs physical modifications (such as annealing treatments, oxygen plasma exposure, or ion implantation) and chemical modifications (such as atomic layer deposition of oxide layers or chemical vapor deposition) to precisely control the oxygen vacancy transmission rate in memristor materials. These parameter changes enable fine-tuning of electrical characteristics like resistance switching ratios and switching voltages, achieving manufacturing precision despite the complexity of the modification processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the customization of memristor characteristics to meet specific system needs, providing unique and repeatable electrical responses for applications such as anti-counterfeiting and authentication, while addressing timing-specific requirements and circuit variances.

Implementation Method 1

the oxygen vacancy transmission rate is controlled through physical or chemical modifications to achieve asymmetric time-based responses

Methodology Applied
Scientific EffectOxygen vacancy transmission:

Data Source

PatentUS11456418B2System and device including memristor materials in parallel
Publication Date: 2022.09.27 ROCKWELL COLLINS INC
  • US11456418B2 patent drawing
  • US11456418B2 patent drawing
  • US11456418B2 patent drawing

AI summary

A system may include a first conductive plate configured at least to receive an input signal and a second conductive plate configured at least to output an output signal. The system may further include a first memristor material positioned between the first conductive plate and the second conductive plate. The system may further include a second memristor material positioned between the first conductive plate and the second conductive plate. The first memristor material and the second memristor material may be in parallel electrically. The first memristor material may be different from the second memristor material.