Parallel Transistor Pad Interconnect Layout for Oscillation Suppression

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Solution Overview

Problem

Conventional semiconductor devices with multiple transistors connected in parallel face instability due to uncontrolled potential differences between transistor pads, leading to oscillation.

Innovation Solution

The semiconductor device incorporates connection members that link specific regions of the transistor pads to stabilize the potential difference, using conductive members and bonding wires to connect second and third connection regions, thereby reducing potential differences and suppressing oscillation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If multiple transistors are connected in parallel to increase current capacity, then the current capacity is improved, but potential oscillation occurs due to uncontrolled potential differences between transistor pads

Engineering Contradiction:
Improvecurrent capacityVSAvoidoperational stability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent applies the equipotentiality principle by connecting corresponding pads (second pads and third pads) of parallel transistors through conductive members. This creates equipotential connections that eliminate potential differences between transistor pads, preventing oscillation while maintaining the high current capacity achieved through parallel connection. The conductive members ensure that all transistors operate at the same potential, resolving the stability issue inherent in parallel configurations.

Inventive Principle:
Principle #12Equipotentiality

2Reliability

If connection members are added to stabilize potential differences, then operational stability is improved, but device complexity increases

Engineering Contradiction:
Improveoperational stabilityVSAvoidnumber of connection members
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the functions of multiple connection members into a single integrated conductive member that simultaneously connects second pads and third pads of multiple transistors. This consolidation reduces the total number of discrete connection members required while maintaining all necessary equipotential connections, thereby improving operational stability without proportionally increasing device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The conductive members serve multiple functions: they provide electrical connection for current flow, establish equipotential conditions to prevent oscillation, and serve as structural interconnects between transistor pads. This multi-functionality reduces the need for separate components for each function, thereby limiting the increase in device complexity while achieving operational stability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Temperature

If transistors are arranged closer to improve heat transfer, then heat dissipation is improved, but potential differences between pads increase leading to oscillation

Engineering Contradiction:
Improveheat dissipationVSAvoidpotential difference control
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

By implementing equipotential connections through conductive members that directly connect corresponding pads of adjacent transistors, the patent eliminates potential differences even when transistors are arranged in close proximity for improved heat dissipation. The equipotential structure ensures that close arrangement does not lead to oscillation, allowing optimal thermal management through compact transistor placement.

Inventive Principle:
Principle #12Equipotentiality

Data Source

PatentUS20250301761A1Semiconductor device
Publication Date: 2025.09.25 SUMITOMO ELECTRIC INDUSTRIES LTD
  • US20250301761A1 patent drawing
  • US20250301761A1 patent drawing
  • US20250301761A1 patent drawing

AI summary

A semiconductor device includes a plurality of transistors electrically connected in parallel to each other, each of the plurality of transistors including a first pad; and a conductive member. The first pad is a source pad or an emitter pad. The first pad includes a first connection region; and a second connection region and a third connection region, the first connection region being located between the second connection region and the third connection region. The semiconductor device includes a first connection member that connects the first connection region to the conductive member; a second connection member that connects second connection regions of two transistors among the plurality of transistors; and a third connection member that connects third connection regions of the two transistors among the plurality of transistors.