Parallel Photodiode Intrinsic Layer for X-Ray Detection
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Solution Overview
Problem
The existing X-ray detection devices have poor performance due to the limited photoelectric conversion efficiency of the photodiode, which is restricted by the inability to manufacture thicker intrinsic layers on the basal substrate.
Innovation Solution
A ray detection substrate with a photodiode configuration where the two doped layers and the intrinsic layer are arranged parallel to the basal substrate, allowing for a thicker intrinsic layer without increasing the photodiode's integral thickness, and an ion doped concentration gradient is implemented to enhance the photodiode's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the intrinsic layer is increased to improve photoelectric conversion efficiency, then the photoelectric conversion efficiency is improved, but the photodiode cannot be manufactured on the basal substrate due to manufacturing limitations
Solution Approach 1:
The patent changes the arrangement direction of the doped layers from perpendicular to the basal substrate to parallel with the basal substrate. This dimensional change allows the intrinsic layer to be extended in the lateral direction rather than the thickness direction, enabling thicker intrinsic layers to be manufactured on the basal substrate while maintaining manufacturing feasibility.
Solution Approach 2:
The patent changes the geometric parameters of the photodiode structure by altering the arrangement orientation of the doped layers. This parameter change enables the intrinsic layer thickness to be increased within manufacturing capabilities, thereby improving photoelectric conversion efficiency without exceeding manufacturing limitations.
2Reliability
If the photodiode thickness is increased to accommodate a thicker intrinsic layer, then the photoelectric conversion efficiency is improved, but the integral thickness of the photodiode increases which affects manufacturing
Solution Approach 1:
The patent resolves this contradiction by changing the orientation of the doped layers from vertical (perpendicular to basal substrate) to horizontal (parallel with basal substrate). This allows the intrinsic layer to be extended laterally rather than increasing the vertical thickness, thereby improving photoelectric conversion efficiency without increasing the integral thickness of the photodiode structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the photoelectric conversion efficiency of the photodiode, leading to better performance of the X-ray detection device with reduced energy consumption and improved imaging quality.
Implementation Method 1
The scintillation layer can convert the X-rays directed into the scintillation layer into visible light and direct the visible light into the photodiode
Implementation Method 2
The photodiode can convert the visible light directed therein into an electric signal
Implementation Method 3
an ion doped concentration gradient is implemented to enhance the photodiode's performance
Data Source
AI summary
The present disclosure provides a ray detection substrate, a manufacturing method thereof and a ray detection device, in the field of display technology. The ray detection substrate comprises: a basal substrate, wherein the basal substrate is provided with a photodiode, the photodiode includes two doped layers and an intrinsic layer located between the two doped layers, and an arrangement direction of the two doped layers is parallel with the basal substrate. The present disclosure solves the problems that the X-ray detection device is poor in performance and improves the performance of the X-ray detection device. The present disclosure is applied to a ray detection device.