Parallel Plasma Bonding of Semiconductor Packages in Low-Oxygen Ambient
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Solution Overview
Problem
The existing bonding process of semiconductor dies to packaging substrates using plasma treatment followed by thermocompression bonding is time-consuming due to the need for precise control of plasma parameters and sequential execution of these processes for each pair, which requires significant operator attention and time.
Innovation Solution
A system combining stationary and mobile plasma treatment systems with a thermocompressive bonding head to perform parallel atmospheric pressure plasma jet treatment and bonding processes in a low-oxygen environment, allowing simultaneous treatment and bonding of multiple pairs of semiconductor dies and packaging substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sequential plasma treatment and thermocompression bonding is performed for each pair of semiconductor die and packaging substrate, then bonding quality is ensured through precise plasma parameter control, but processing time is significantly increased
Solution Approach 1:
The bonding apparatus divides the processing area into multiple independent bonding positions (first bonding position, second bonding position, etc.), allowing multiple pairs of semiconductor dies and packaging substrates to be treated and bonded simultaneously at different positions, thereby reducing overall processing time while maintaining quality control at each position
Solution Approach 2:
The system combines plasma treatment and thermocompression bonding operations into a single integrated process chamber, enabling plasma treatment of semiconductor dies and packaging substrates to occur concurrently with thermocompression bonding at different positions within the same chamber, eliminating sequential execution delays
2Manufacturing precision
If precise control of plasma parameters is maintained for each treatment, then surface cleaning quality is improved, but operator attention and time requirements increase
Solution Approach 1:
The plasma generation system incorporates automated control mechanisms that maintain precise plasma parameters through self-regulation, reducing the need for continuous manual monitoring and adjustment by operators while ensuring consistent surface cleaning quality across multiple bonding positions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces processing time by enabling simultaneous plasma treatment and bonding of multiple pairs, improving efficiency and reducing the need for precise manual control, while ensuring clean surfaces for effective bonding.
Implementation Method 1
a first plasma treatment system (50) located within the process chamber and comprising a first plasma nozzle (51) and configured to generate a first plasma (P1) in a first plasma zone (PZ1)
Implementation Method 2
a thermocompressive bonding head (40) configured to bond a semiconductor package (10) to a packaging substrate (20)
Data Source
AI summary
A bonded assembly may be formed by providing a wafer comprising at least a first packaging substrate and a second packaging substrate in a low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient while performing a first substrate-treatment process on the first packaging substrate in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; and performing a second plasma package-treatment process on the second semiconductor package while performing a second substrate-treatment process on the second packaging substrate and while bonding the first semiconductor package to the first packaging substrate.