Parallel Plate E-Field Applicator for Uniform Semiconductor Annealing
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Solution Overview
Problem
Current annealing techniques for semiconductor substrates, such as microwave heating, face challenges in controlling and monitoring the electromagnetic field, leading to non-uniform heating and potential damage due to eddy currents, while traditional RF heating is limited in effectiveness and scope.
Innovation Solution
An annealing system utilizing a uniform microwave field generator with parallel plates and a turntable to create a periodic change in microwave polarity, causing eddy currents to flow perpendicular to the substrate, ensuring even heating and selective defect repair in semiconductor materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If microwave heating is used in a multi-mode chamber, then heating capability is improved, but E-field control and uniformity deteriorate
Solution Approach 1:
The patent introduces an intermediary material (lossy dielectric material) between the microwave source and the substrate to mediate the E-field distribution. This intermediary absorbs and redistributes microwave energy, creating a more uniform E-field across the substrate surface while maintaining effective heating capability.
Solution Approach 2:
The patent changes the physical parameters of the heating system by introducing a lossy dielectric material with specific electromagnetic properties. This material has controlled loss tangent and permittivity values that transform the microwave field distribution, converting the difficult-to-control multi-mode E-field into a more uniform pattern suitable for substrate processing.
2Productivity
If E-field concentration is increased to improve heating efficiency, then heating rate is improved, but thermal runaway and arcing occur
Solution Approach 1:
The patent converts the harmful concentration of E-field into a beneficial uniform distribution by using the lossy dielectric material. The material's electromagnetic properties cause it to absorb concentrated E-field energy and re-radiate it uniformly, transforming what would be damaging hot spots into beneficial uniform heating across the entire substrate.
Solution Approach 2:
The patent modifies the electromagnetic parameters of the heating system by introducing material with specific loss tangent (0.1-10) and permittivity (2-20) values. These parameter changes ensure that high power densities are distributed uniformly rather than concentrated, maintaining high heating rates without causing thermal runaway or arcing.
3Device complexity
If traditional RF heating is used, then device complexity is reduced, but heating effectiveness and scope are limited
Solution Approach 1:
The patent creates a multi-functional heating system that combines microwave generation with lossy dielectric material to achieve both uniform E-field distribution and effective substrate heating. This single integrated approach provides the heating effectiveness of complex systems while maintaining relative simplicity, as it uses standard microwave components combined with a specially designed material layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides uniform and controlled heating of semiconductor substrates, avoiding thermal runaway and arcing, while effectively targeting defects within the material, thereby completing the activation process and repairing damage more efficiently than traditional methods.
Implementation Method 1
a uniform microwave field generator... generate a uniform microwave field
Implementation Method 2
Microwaves will flow in higher concentrations to the target substrate if it is made of a material with proper dielectrics
Implementation Method 3
creating a periodic change in polarity of microwaves applied to the target substrate... causing eddy currents to flow perpendicular to the plates and the target substrate
Implementation Method 4
the periodic change provides perpendicular flow of eddy currents relative to the target substrate and the plates
Implementation Method 5
the two plates may be spaced sufficiently close together to form a capacitance effect therebetween within the uniform microwave field
Implementation Method 6
a turntable device coupled to the two plates and the target substrate... The turntable may rotate the plates and the target substrate within the uniform microwave field
Data Source
AI summary
A system and method for annealing a target substrate such as a semiconductor using industrial microwave heating and parallel plate reaction. Using a uniform microwave field, with the target substrate located between parallel plates controls application of eddy currents to the target substrate. The system may include a uniform microwave field generator, support elements, two plates held in parallel to each other, and a turntable device configured to rotate the two plates and the target substrate within the uniform microwave field. The rotating of the plates and target substrate in the uniform microwave field creates a periodic change in polarity of the microwaves applied to the target substrate. The eddy currents in the uniform microwave field react by flowing perpendicular to the plates, and not parallel to the surface as in traditional microwave reactions of metals. This redirection of the eddy currents provides even heating of the target substrate.