Parallel Power Conversion Circuit for Short-Circuit Withstand Time
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Solution Overview
Problem
Existing power conversion circuits using semiconductor elements in parallel face challenges in short-circuit withstand time and complex control due to the use of gallium oxide-based semiconductors, which require multiple gate drivers and complicated control.
Innovation Solution
A power conversion circuit with a first and second switching element connected in parallel, where the current value at the cross point of their current-voltage characteristics exceeds the rated current value, and optionally includes a reactor in series with the second switching element, to enhance short-circuit withstand time without compromising switching characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gallium oxide-based semiconductor elements are used in parallel configuration, then switching characteristics are improved, but control complexity increases due to multiple gate drivers
Solution Approach 1:
The patent combines multiple semiconductor elements (Si IGBT and Ga2O3 MOSFET) in parallel within a single power conversion circuit module. By integrating these different element types to share common circuit functions and control pathways, the design achieves improved switching characteristics while avoiding the need for completely separate control systems for each element type.
Solution Approach 2:
The control unit is designed to universally control both Si IGBT and Ga2O3 MOSFET elements through a unified control architecture. The control unit can selectively activate or deactivate specific elements based on operating conditions, enabling a single control system to manage multiple element types with different characteristics, thereby reducing overall control complexity.
2Productivity
If gallium oxide-based semiconductor elements are used in parallel configuration, then switching characteristics are improved, but control complexity increases due to multiple gate drivers
Solution Approach 1:
The control unit dynamically selects which semiconductor element to activate based on real-time operating conditions such as current magnitude and switching frequency requirements. The system can transition between using only Si IGBT, only Ga2O3 MOSFET, or both in parallel, providing adaptive control that simplifies operation while maintaining optimal switching characteristics across different operating regimes.
3Reliability
If semiconductor elements are connected in parallel for protection and optimization, then reliability is improved, but short-circuit withstand time is limited
Solution Approach 1:
The control unit is configured to detect abnormal conditions such as short circuits and immediately deactivate affected semiconductor elements before damage occurs. By implementing preliminary protective action through rapid detection and response mechanisms, the system extends the effective withstand time during short-circuit events while maintaining reliability through preventive element deactivation.
Solution Approach 2:
The control unit acts as an intermediary between the parallel-connected semiconductor elements and the power conversion circuit. During short-circuit conditions, the control unit mediates by selectively deactivating specific elements that are experiencing abnormal current, thereby protecting the overall system and extending the time the circuit can withstand the short-circuit condition without catastrophic failure.
Data Source
AI summary
Provided is a power conversion circuit, including: a first switching element and a second switching element connected in parallel to each other; and a control unit configured to control turn-on/off of each of the switching elements, wherein a current value at a cross point of current-voltage characteristics when a forward current flows through the first switching element and current-voltage characteristics when a current flows through the second switching element is greater than a rated current value of the power conversion circuit.