Parallel Gate-Controlled Semiconductors for Junction Temperature Sensing
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Solution Overview
Problem
Existing methods for determining barrier layer temperatures in power semiconductors are limited by the need for external thermally coupled sensors, which introduce time delays and are not cost-effective for instantaneous and high-resolution measurements, especially in power electronics applications where precise temperature control is crucial for reliable operation.
Innovation Solution
A circuit arrangement comprising gate-controlled semiconductor components connected in parallel, with a gate control circuit that varies the gate voltages using alternating signals to maintain constant total conductance, allowing for independent activation and temperature measurement of each component without external sensors, utilizing current measuring devices and an evaluation unit to ascertain barrier layer temperatures based on parasitic gate impedances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If external thermally coupled sensors are used to determine barrier layer temperatures, then temperature measurement capability is provided, but time delays occur and cost increases
Solution Approach 1:
The semiconductor component itself serves as the temperature sensor by utilizing its intrinsic gate impedance characteristics. The gate impedance naturally varies with temperature, allowing the component to self-diagnose its temperature state without external sensing elements, thereby eliminating thermal coupling delays and additional costs
Solution Approach 2:
The method exploits the temperature-dependent variation of the gate impedance parameter. By measuring changes in gate impedance at different temperatures and using calibration data, the barrier layer temperature is determined through parameter transformation rather than direct thermal sensing
2Measurement precision
If external thermally coupled sensors are used to determine barrier layer temperatures, then temperature measurement capability is provided, but cost increases
Solution Approach 1:
The semiconductor component itself serves as the temperature sensor by utilizing its intrinsic gate impedance characteristics. The gate impedance naturally varies with temperature, allowing the component to self-diagnose its temperature state without external sensing elements, thereby eliminating thermal coupling delays and additional costs
Solution Approach 2:
Instead of using physical thermal sensors, the method creates an electrical model (copy) of the temperature effect through gate impedance measurement. The impedance characteristics are copied and analyzed to infer temperature, replacing expensive physical sensors with electrical measurement circuits
3Loss of time
If gate voltages are varied to measure temperature, then instantaneous temperature measurement is achieved, but total conductance must be maintained constant
Solution Approach 1:
The control system continuously monitors the total conductance of parallel-connected semiconductor components and adjusts individual gate voltages in real-time. When one component's conductance changes due to gate voltage variation for temperature measurement, the system compensates by adjusting the other component's gate voltage to maintain constant total conductance, ensuring stable operation
Solution Approach 2:
The system dynamically adjusts gate voltages of individual semiconductor components while maintaining constant total conductance. The gate control circuit actively modulates voltages during measurement cycles, adapting to changing temperature conditions and load requirements to enable instantaneous temperature measurement without disrupting overall system operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables quasi-instantaneous, high-resolution temperature measurements without external sensors, providing cost-effective and reliable temperature monitoring for power semiconductors, allowing for timely load adjustments and preventing unallowable temperature rises, and can be applied to various semiconductor components with different designs.
Implementation Method 1
the current is influenced by the temperature dependency of a parasitic impedance of the IGBT-internal gate terminal
Data Source
AI summary
A circuit arrangement, an electrical system, and a method for determining barrier layer temperatures of gate-controlled semiconductor components. First and second semiconductor components of the circuit arrangement are connected in parallel and activated using a gate control circuit which, in an active forward mode of the two semiconductor components, varies a first gate voltage of the first semiconductor component using a first signal, and to varies a second gate voltage of the second semiconductor component using a second signal that is opposite the first signal. An evaluation unit of the circuit arrangement is configured to use first and second current measuring devices to measure first and second gate currents of the first and second semiconductor components, respectively, and to determine in each case, based on the particular varied gate voltages and the respective corresponding gate currents, respective barrier layer temperatures of the two semiconductor component.