Parallel Sputtering Thin Film Deposition Apparatus
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Solution Overview
Problem
Traditional cluster type sputtering systems for thin film deposition are limited by their sequential processing of substrates, leading to reduced productivity.
Innovation Solution
A thin film depositing apparatus is designed with multiple process chambers and a substrate transfer module that allows simultaneous processing of multiple substrates, utilizing sputter guns and inductive coupled plasma tubes to induce plasmas for efficient film deposition across multiple substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a typical cluster type sputtering system processes substrates sequentially through a single transfer chamber, then the system structure remains relatively simple, but productivity is reduced
Solution Approach 1:
The system is divided into multiple independent process chambers (first process chamber with first sputter guns, second process chamber with second sputter guns) that can operate simultaneously on different substrates. Each chamber is connected to the transfer chamber through separate transfer modules, allowing parallel processing and significantly improving productivity while maintaining manageable system complexity through modular design
Solution Approach 2:
The system transitions from sequential single-chamber processing to multi-chamber parallel processing by adding spatial dimensions. Multiple substrates are processed simultaneously in different chambers at the same time, effectively utilizing three-dimensional space rather than linear sequential processing, thereby dramatically increasing throughput
2Productivity
If multiple sputter guns are used to process multiple substrates simultaneously, then productivity increases, but plasma uniformity and process control become more difficult
Solution Approach 1:
The system divides the plasma generation function into multiple independent sputter guns (first sputter guns in the first process chamber, second sputter guns in the second process chamber). Each sputter gun operates independently with its own plasma source, allowing precise control of film deposition on each substrate while maintaining overall system productivity through parallel operation
Solution Approach 2:
The transfer chamber serves as an intermediary that coordinates substrate movement between multiple process chambers. The transfer modules (including robot arms and transfer belts) act as intermediaries that precisely position substrates in each chamber, ensuring uniform processing conditions across all substrates while enabling simultaneous processing to maintain high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly increases productivity by enabling simultaneous thin film deposition on multiple substrates, improving the efficiency and uniformity of the process.
Implementation Method 1
a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates
Implementation Method 2
a plurality of inductive coupled plasma tubes inducing a second plasma that is more expanded than the first plasma between the plurality of sputter guns and the plurality of substrates
Implementation Method 3
suction plates suctioning the plurality of substrates using a vacuum pressure provided from the vacuum pipes
Data Source
AI summary
Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a loading chamber loading a plurality of substrates; a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates; a buffer chamber connected to the other side of the first process chamber facing the loading chamber; and a substrate transfer module simultaneously passing the plurality of substrates between the plurality of sputter guns during a process using the first plasma and transferring the plurality of substrates from the first process chamber to the buffer chamber.