Parallel Sub-TFT Structures for High Load Driving
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Solution Overview
Problem
Thin film transistors in display devices face challenges in driving high loads due to limited driving capability and high leakage currents, primarily attributed to process defects and light irradiation affecting the active layer performance.
Innovation Solution
The design incorporates multiple sub-TFT structures connected in parallel with separated active layers and independent or integrated gates, enhancing the width-to-length ratio of the channel and reducing the active layer area, which improves yield and reduces leakage currents by minimizing the impact of light irradiation and process defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a single thin film transistor is used, then the device structure is simple, but the driving capability is insufficient for high load regions
Solution Approach 1:
The transistor channel is divided into multiple independent active layers (first active layer, second active layer, etc.) arranged in parallel between source and drain electrodes. Each active layer has its own gate electrode, creating multiple parallel conduction paths that increase total driving capability while maintaining manageable structural complexity through modular design.
2Power
If the active layer area is increased to improve driving capability, then the width-to-length ratio increases, but leakage currents increase due to light irradiation and process defects
Solution Approach 1:
The continuous active layer is segmented into multiple separate active layers. This segmentation reduces the total active layer area required to achieve the same driving capability, thereby minimizing exposure to light irradiation and process defects that cause leakage currents, while still providing sufficient conduction paths through parallel arrangement.
Solution Approach 2:
Each active layer is independently controlled by its own gate electrode, allowing localized optimization of each layer's properties. This enables precise control over current distribution across different active layers, optimizing the balance between driving capability and leakage reduction by adjusting individual layer characteristics.
Data Source
AI summary
A thin film transistor, an array substrate, a display panel and a display device are provided, which is related to the field of display technologies. A thin film transistor comprises: a substrate; at least two active layers on the substrate, each active layer comprising a first terminal and a second terminal opposite to each other; a source and a drain above the substrate. The first terminal of each of the at least two active layers is electrically connected to the source, and the second terminal of each of the at least two active layers is electrically connected to the drain, and the at least two active layers are arranged on an upper surface of the substrate and separated from one another.