Parallel Switching Elements Thermal Management

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Solution Overview

Problem

When switching elements are connected in parallel to increase the current capacity of a semiconductor device, temperature variations occur due to current imbalances, necessitating uniform characteristics to limit temperature variations, which complicates management and increases the number of management points.

Innovation Solution

A semiconductor device design that includes multiple substrates and diodes connected in parallel with switching elements, where a molding resin covers the components while exposing specific terminals, allowing for increased current capacity without increasing the number of management points by thermally connecting switching elements and limiting thermal nonuniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If switching elements are connected in parallel to increase current capacity, then the current capacity of the semiconductor device is improved, but temperature variation between switching elements increases due to current unbalance

Engineering Contradiction:
Improvecurrent capacityVSAvoidtemperature variation
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent merges multiple switching elements (first and second switching elements) onto a single common substrate, creating a unified thermal management system. This combining approach ensures that both switching elements share the same thermal characteristics and are subjected to uniform temperature conditions, thereby reducing temperature variation even when operating at high currents in parallel configuration.

Inventive Principle:
Principle #5Merging (Combining)

2Temperature

If characteristics of switching elements connected in parallel are made uniform to limit temperature variation, then the number of management points of characteristics increases

Engineering Contradiction:
Improvetemperature uniformityVSAvoidnumber of management points
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent combines multiple switching elements into a single integrated module mounted on one substrate, reducing the number of separate management points. Instead of managing multiple independent devices with potentially different characteristics, the unified module approach allows for standardized manufacturing and testing procedures, thereby limiting the increase in management complexity while achieving uniform thermal characteristics.

Inventive Principle:
Principle #5Merging (Combining)

3Power

If multiple switching elements are connected in parallel, then current capacity is increased, but the complexity of managing characteristic uniformity increases

Engineering Contradiction:
Improvecurrent capacityVSAvoidcharacteristic management complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent merges multiple switching elements into a single integrated module with common mounting substrate and unified structural support. This merging reduces characteristic management complexity by enabling standardized manufacturing processes, uniform material selection, and simplified testing protocols for the entire module rather than managing each switching element independently.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The common substrate serves multiple functions simultaneously: it provides mechanical support for all switching elements, establishes uniform thermal pathways, ensures consistent electrical connections, and facilitates simplified mounting and integration. This multi-functionality reduces the need for separate management systems for each function, thereby reducing overall complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10224267B2Semiconductor device
Publication Date: 2019.03.05 MITSUBISHI ELECTRIC CORP
  • US10224267B2 patent drawing
  • US10224267B2 patent drawing
  • US10224267B2 patent drawing

AI summary

A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.