Ion Implantation Park Electrode Beam Deflection
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Solution Overview
Problem
Existing ion implantation apparatuses face challenges in efficiently evacuating ion beams of varying diameters and sectional shapes without influencing peripheral members, particularly during discharge phenomena, which affect beam uniformity and dose accuracy.
Innovation Solution
An ion implantation apparatus equipped with a deflecting apparatus that uses an electric field to divert the ion beam from its trajectory line, allowing for high-speed and temporary evacuation, and includes a beam scanner for periodic scanning and dose measurement, enabling the apparatus to manage beam diameter and shape variations and restart ion implantation when conditions improve.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a beam scanner is used to evacuate ion beams by deflecting them beyond scanning range, then ion beam evacuation is achieved, but it becomes difficult to ensure evacuating space and avoid sputtering of peripheral members when the ion beam has a large effective diameter
Solution Approach 1:
The patent introduces a separate evacuating mechanism (third electrode) independent from the beam scanning electrodes. This segmentation allows the scanning electrodes to maintain their normal scanning function while the dedicated evacuating electrode handles beam evacuation, eliminating the need to redesign scanning electrodes for large-diameter beam evacuation and avoiding sputtering issues.
Solution Approach 2:
The patent employs a third electrode as an intermediary component positioned between the ion beam path and peripheral members. This intermediary electrode receives the deflected ion beam through a through-hole, preventing direct sputtering of peripheral members while enabling effective evacuation of large-diameter beams without complicating the scanning electrode design.
2Manufacturing precision
If conventional discharge monitoring is used to stop ion implantation when discharge phenomena occur, then ion beam uniformity is maintained, but ion implantation productivity decreases due to frequent interruptions
Solution Approach 1:
The patent enables rapid evacuation of ion beams through the dedicated third electrode when discharge phenomena are detected, allowing the system to quickly skip through problematic states and resume normal operation. This reduces interruption time and maintains higher overall productivity while still ensuring ion beam uniformity during actual implantation processes.
Solution Approach 2:
The system incorporates monitoring means that continuously detects discharge phenomena and triggers the evacuating mechanism accordingly. This feedback loop allows the system to automatically respond to discharge conditions, maintaining ion beam uniformity by evacuating beams when necessary while minimizing interruptions to overall productivity through rapid detection and response.
3Speed
If the ion beam is deflected considerably from the beam trajectory line for high speed evacuating, then ion beam evacuation is achieved, but the ion beam may impinge on scanning electrodes and cause sputtering of peripheral members
Solution Approach 1:
The third electrode serves as an intermediary that receives the deflected ion beam through its through-hole. This intermediary structure allows the ion beam to be deflected considerably for fast evacuation while intercepting the beam before it can reach and sputter peripheral members, thus resolving the contradiction between evacuation speed and peripheral member protection.
Solution Approach 2:
The patent extracts the beam reception function from the peripheral members and assigns it to the dedicated third electrode with a through-hole. This extraction allows peripheral members to be protected from sputtering while the third electrode specifically handles the deflected ion beam, enabling fast evacuation without harmful effects on surrounding components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-speed and temporary evacuation of ion beams regardless of diameter or shape, preventing nonuniform ion implantation and allowing for precise control and restart of the ion implantation process without affecting peripheral components.
Implementation Method 1
a deflecting apparatus arranged at a section of the beam line from an outlet of the mass analysis magnet apparatus to a front side of the mass analysis slit or a rear side of the mass analysis slit for deflecting the ion beam in a predetermined direction deviated from a beam trajectory line by an operation of an electric field
Implementation Method 2
an ion beam comprising ions having a desired mass is extracted by a mass analysis magnet apparatus
Implementation Method 3
a gas of a required ion species supplied to an ion source is ionized in a plasma chamber to thereby generate a plasma and an ion beam is extracted from the plasma
Data Source
AI summary
An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.