Partial-Anodized Substrate Supporting Plate for Rear-Side Cleanliness
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Solution Overview
Problem
During semiconductor thin film deposition, residual gases such as source and reactive gases can penetrate between the substrate and the susceptor, leading to contamination of the substrate and the reactor, which affects the quality of the semiconductor device.
Innovation Solution
A substrate supporting plate with an anodized edge portion and a non-anodized central portion is used to prevent gas penetration. The anodized edge portion forms an insulating layer, increasing the adhesive force between the substrate and the supporting plate, while allowing easy detachment of the substrate after processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the substrate is fully anodized on the supporting plate, then the adhesive force is maximized, but the substrate cannot be easily detached after processing
Solution Approach 1:
The supporting plate features localized anodization where only the peripheral portion is anodized to form an insulating layer, while the central portion remains non-anodized. This local differentiation creates strong adhesion at the edges to prevent gas penetration, while maintaining easy detachability in the center area where the substrate contacts the supporting plate during processing.
2Ease of operation
If the substrate is not anodized on the supporting plate, then the substrate can be easily detached, but gas penetrates between the substrate and supporting plate causing contamination
Solution Approach 1:
The supporting plate features localized anodization where only the peripheral portion is anodized to form an insulating layer, while the central portion remains non-anodized. This local differentiation creates strong adhesion at the edges to prevent gas penetration, while maintaining easy detachability in the center area where the substrate contacts the supporting plate during processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents gas penetration onto the rear surface of the substrate, reducing contamination and improving the quality of the semiconductor device. Additionally, the partial anodization allows for easy unloading of the substrate after processing.
Implementation Method 1
an edge portion of a top surface of the substrate mounting portion is anodized
Implementation Method 2
The anodized edge portion forms an insulating layer, increasing the adhesive force between the substrate and the supporting plate
Data Source
AI summary
A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.