Partial Heat Spreader on RDL Hybrid Interposer

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Solution Overview

Problem

The complex and costly manufacturing process of semiconductor devices due to the need for comprehensive thermal and mechanical contact of heat sinks around semiconductor die, which adds complexity and expense to heat dissipation.

Innovation Solution

A redistribution layer (RDL) hybrid interposer substrate with a heat spreader that makes contact to the substrate around a first portion of the semiconductor device, while leaving open a second portion, simplifying the attachment and reducing manufacturing complexity and cost by allowing partial thermal contact for heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a heat sink is mechanically and thermally attached to the substrate on all sides of the semiconductor die, then heat dissipation is improved, but manufacturing complexity and cost increase

Engineering Contradiction:

Improveheat dissipationVSAvoidmanufacturing complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The patent applies partial action by attaching the heat spreader to the substrate at only one location rather than surrounding the entire semiconductor die. This single-point attachment provides sufficient thermal management while significantly reducing manufacturing complexity and cost compared to complete peripheral attachment.

Inventive Principle:

Principle #16Partial or excessive action

2Temperature

If a heat sink is mechanically and thermally attached to the substrate on all sides of the semiconductor die, then thermal contact is improved, but manufacturing cost increases

Engineering Contradiction:

Improvethermal contactVSAvoidmanufacturing cost

Core Design Contradiction:

TemperatureVSEase of manufacture

Solution Approach 1:

The invention uses partial attachment of the heat spreader at a single location rather than complete surrounding attachment. This provides adequate thermal contact for effective heat dissipation while substantially reducing manufacturing cost and complexity.

Inventive Principle:

Principle #16Partial or excessive action

Solution Approach 2:

The patent extracts the heat spreader attachment from being a complete peripheral structure and reduces it to a single-point attachment. This extraction removes unnecessary manufacturing steps and materials while maintaining sufficient thermal management functionality.

Inventive Principle:

Principle #2Taking out (Extraction)

3Loss of energy

If comprehensive thermal contact is made around the semiconductor die, then heat dissipation effectiveness is improved, but the attachment process becomes more complex

Engineering Contradiction:

Improveheat dissipation effectivenessVSAvoidattachment complexity

Core Design Contradiction:

Loss of energyVSDevice complexity

Solution Approach 1:

The patent implements partial attachment of the heat spreader at one location rather than complete surrounding attachment. This provides sufficient thermal pathways for effective heat dissipation while dramatically simplifying the attachment process and reducing overall device complexity.

Inventive Principle:

Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the manufacturing process and reduces costs by allowing partial heat dissipation while maintaining effective thermal management, thereby improving the efficiency and affordability of semiconductor device production.

Implementation Method 1

A portion of the heat sink thermally contacts a thermal interface material (TIM) deposited on a top surface of the semiconductor die and another portion of the heat sink mechanically and thermally contacts the substrate, with another TIM layer, to transfer or dissipate the heat away from the semiconductor die and into the substrate.

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230119181A1Semiconductor Device and Method of Forming RDL Hybrid Interposer Substrate

Publication Date: 2023.04.20 STATS CHIPPAC LTD

AI summary

A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. The first electrical component has a second substrate, and redistribution layer formed over the second substrate. The first electrical component is disposed over the redistribution layer. The heat spreader is disposed over the first electrical component. A heat spreader is disposed over the first electrical component. The heat spreader has a first horizontal portion, second horizontal portion vertically offset from the first horizontal portion, and an angled portion connecting the first horizontal portion from the second horizontal portion. The second horizontal portion attaches to a surface of the first substrate proximate to a first side of the first electrical component. The heat spreader attaches to the first substrate proximate to a first side of the first electrical component and remains open proximate to a second side of the first electrical component.