Partial-Liner Interconnect Structure for Lower Resistance Scaling
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Solution Overview
Problem
The scaling of semiconductor interconnects is limited by the size constraints of liner and barrier materials, leading to high resistance and capacitance, which impacts the speed of operation in semiconductor devices.
Innovation Solution
Implementing interconnects with a portion without a liner material, allowing for closer spacing and reduced electrical resistance by removing liner materials from the second end of the interconnects, and using a replacement ILD material with a lower dielectric constant to decrease capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If liner material is applied to interconnects for adhesion and protection, then reliability is improved, but resistance increases and scaling is limited
Solution Approach 1:
The patent applies liner material selectively to specific portions of the interconnect structure rather than uniformly across the entire interconnect. The liner is applied to the ILD-facing portion where adhesion is needed, while omitting it from portions where it would impede scaling or increase resistance. This localized application resolves the contradiction by providing protection where needed without the penalties of universal lining.
2Reliability
If liner material is applied to interconnects for adhesion, then reliability is improved, but electrical resistance increases
Solution Approach 1:
The liner material is applied only to portions of the interconnect where adhesion to the ILD is required, while leaving other portions unlined to maintain low electrical resistance. This selective application ensures that the adhesion function is fulfilled without unnecessarily increasing the overall resistance of the interconnect structure.
3Strength
If traditional ILD material is used, then structural integrity is maintained, but capacitance is high which reduces speed
Solution Approach 1:
The patent changes the dielectric constant parameter of the ILD material by using materials with lower dielectric constants (such as porous low-k materials). This parameter change reduces the capacitance between adjacent interconnects, thereby increasing the speed of operation while maintaining sufficient structural integrity through appropriate material selection and structural design.
Data Source
AI summary
Integrated circuit (IC) structures, computing devices, and related methods are disclosed. An IC structure includes an interlayer dielectric (ILD), an interconnect, and a liner material separating the interconnect from the ILD. The interconnect includes a first end extending to or into the ILD and a second end opposite the first end. A second portion of the interconnect extending from the second end to a first portion of the interconnect proximate to the first end does not include the liner material thereon. A method of manufacturing an IC structure includes removing an ILD from between interconnects, applying a conformal hermetic liner, applying a carbon hard mask (CHM) between the interconnects, removing a portion of the CHM, removing the conformal hermetic liner to a remaining CHM, and removing the exposed portion of the liner material to the remaining CHM to expose the second portion of the interconnects.