Semiconductor Structure With Partial Metallic Shielding for Optical Coupling
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Solution Overview
Problem
There is a challenge in minimizing interference between photoelectric devices and dies in semiconductor structures, leading to optical loss and reduced optical coupling efficiency.
Innovation Solution
Incorporating a metallic shield that extends partially through the redistribution layer and surrounds light-conducting members, along with reflective layers to enhance light transmission and collection by the photoelectric device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If photoelectric devices and dies are integrated in close proximity to improve integration density, then more components can be integrated into a given area, but optical interference and coupling loss increase
Solution Approach 1:
A metallic shield structure is introduced as an intermediary element positioned between the die and the light-conducting member. This shield acts as a mediator that guides and protects optical signals from the light-conducting member to the photoelectric device, preventing optical interference from adjacent dies while maintaining close integration. The shield resolves the contradiction by enabling high integration density without sacrificing optical coupling efficiency.
2Reliability
If the metallic shield extends fully through the redistribution layer, then optical shielding is maximized, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The metallic shield extends partially through the redistribution layer rather than completely penetrating it. This partial extension provides sufficient optical shielding and signal guidance functionality while reducing manufacturing complexity. The shield extends far enough to accomplish its primary function of protecting and guiding optical signals, but stops before creating unnecessary structural complexity that would increase device fabrication difficulty.
3Reliability
If light-conducting members are positioned closer to photoelectric devices to improve coupling efficiency, then optical coupling efficiency increases, but susceptibility to optical interference from adjacent dies worsens
Solution Approach 1:
The light-conducting member is positioned within a protective metallic shield structure that is nested around it. This nested configuration allows the light-conducting member to be in close proximity to the photoelectric device for high coupling efficiency, while the surrounding shield nested structure protects the optical path from interference by adjacent dies. The nested arrangement resolves the contradiction by providing both close proximity and protective isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metallic shield and reflective layers reduce optical loss and improve optical coupling efficiency, enhancing the performance of semiconductor structures.
Implementation Method 1
a metallic shield extending at least partially through the redistribution layer and surrounding the first opening
Implementation Method 2
reflective layers to enhance light transmission and collection by the photoelectric device
Data Source
AI summary
The semiconductor structure includes a die, a dielectric layer surrounding the die, a photoelectric device disposed adjacent to the die and surrounded by the dielectric layer, a first opening extending through the redistribution layer and configured to receive a light-conducting member, and a metallic shield extending at least partially through the redistribution layer and surrounding the first opening. A method for forming a semiconductor structure includes receiving a die; forming a dielectric layer to surround the die; and disposing a photoelectric device surrounded by the dielectric layer; forming a redistribution layer over the die, the dielectric layer and the photoelectric device; and removing a portion of the redistribution layer to form a first opening over the photoelectric device. A metallic shield extending at least partially through the redistribution layer and surrounding the first opening is formed during the formation of the redistribution layer.


