Particle-Attracting Coating for Lithography Chamber Cleaning

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Solution Overview

Problem

Existing semiconductor manufacturing systems face inefficiencies in removing particles from processing chambers, leading to prolonged cleaning times and potential contamination of semiconductor wafers, which affects production yield and increases maintenance costs.

Innovation Solution

A particle attracting member with a coating layer, such as Titanium dioxide (TiO2) film, is used to attract particles in the processing chamber by exploiting a potential difference, reducing cleaning time from 72 hours to under 1 hour and enhancing local cleaning capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of time

If conventional particle removal methods are used in semiconductor processing chambers, then particles can be removed, but the cleaning time is excessively long (72 hours) and maintenance costs increase

Engineering Contradiction:

Improvecleaning timeVSAvoidproduction yield

Core Design Contradiction:

Loss of timeVSProductivity

Solution Approach 1:

The patent changes the physical-chemical parameters of the processing chamber environment by introducing oxygen plasma. This transforms the cleaning mechanism from slow conventional methods to rapid plasma-based particle removal, reducing cleaning time from 72 hours to under 1 hour while maintaining effective particle removal capability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces mechanical/conventional particle removal methods with a plasma-based chemical process. The oxygen plasma chemically reacts with particles to form volatile compounds that can be easily evacuated, substituting the slow mechanical removal process with a faster chemical reaction mechanism

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If conventional cleaning methods are used, then particles are removed, but the chamber remains contaminated and wafer defects occur

Engineering Contradiction:

Improvechamber cleanlinessVSAvoidwafer contamination

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent uses oxygen plasma, which contains highly reactive oxygen species that act as strong oxidants. These oxidants rapidly react with organic and inorganic particles on chamber surfaces, converting them into volatile oxides that are easily removed by vacuum pumping, thereby achieving thorough chamber cleaning and preventing wafer contamination

Inventive Principle:

Principle #38Strong oxidants (Accelerated oxidation)

Solution Approach 2:

The patent utilizes phase transitions in the cleaning process. Oxygen plasma converts solid/liquid particles into gaseous volatile compounds through chemical reaction, which then transition from the condensed phase to gas phase, allowing easy removal by vacuum systems and ensuring complete chamber decontamination

Inventive Principle:

Principle #36Phase transitions

3Ease of operation

If manual cleaning procedures are used, then particles can be addressed, but human intervention increases operational complexity and time requirements

Engineering Contradiction:

Improvecleaning operationVSAvoidautomated particle removal

Core Design Contradiction:

Ease of operationVSExtent of automation

Solution Approach 1:

The patent implements a self-service cleaning system where the oxygen plasma automatically cleans the processing chamber without human intervention. The plasma is generated within the chamber and self-propagates the cleaning reaction, eliminating the need for manual cleaning operations and enabling automated, repeatable cleaning cycles that reduce operational complexity

Inventive Principle:

Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively minimizes particle removal time, improves chamber cleanliness, reduces human intervention, and enhances production yield by minimizing wafer defects, thus lowering maintenance costs.

Implementation Method 1

attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer

Methodology Applied

Scientific EffectElectrostatic attraction: Electrostatics

Data Source

PatentUS12443114B2Particle removal method

Publication Date: 2025.10.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The processing chamber is configured to perform a lithography exposure process on a semiconductor wafer. The method also includes fixing the particle attracting member on a reticle holder in the processing chamber in a cleaning cycle, attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer, and loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. The method also includes loading the semiconductor wafer into the processing chamber, and performing the lithography exposure process on the semiconductor wafer in the processing chamber using a reticle fixed on the reticle holder after the cleaning cycle.