Particle Beam Gas Feed Unit With Micro-Valves for Stable Deposition
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Solution Overview
Problem
Existing gas feed devices for particle beam apparatuses face challenges in achieving immediate and constant control over the flow of precursor gases, leading to delayed and inconsistent deposition rates, potential plasma discharges, and contamination risks due to multiple feed units and thermal decomposition issues.
Innovation Solution
A gas feed device with a single feed unit and micro-valves for each precursor reservoir, allowing precise control over the flow of precursor gases, enabling immediate and constant adjustments, and incorporating cleaning mechanisms to prevent contamination and thermal issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple feed units are used for different precursors, then the ability to feed multiple precursors is improved, but the risk of contamination between precursors increases
Solution Approach 1:
The patent combines multiple precursor feeding functions into a single feed unit by sequentially introducing different precursors. The feed unit is designed to handle multiple precursors through time-separated introduction, eliminating cross-contamination while maintaining the capability to process multiple precursor types.
Solution Approach 2:
The system employs periodic action by sequentially introducing different precursors at different time intervals through the same feed unit. Each precursor is introduced in a separate time window, preventing contamination while maintaining versatility in handling multiple precursor types.
2Object-affected harmful factors
If the precursor reservoir is kept warm to prevent condensation, then condensation is reduced, but thermal decomposition of the precursor increases
Solution Approach 1:
The system applies local quality by maintaining different temperature zones: the precursor reservoir is kept at a lower temperature to prevent thermal decomposition, while the feed unit and delivery pathways are heated to prevent condensation. This localized temperature differentiation resolves the contradiction between preventing condensation and avoiding thermal decomposition.
Solution Approach 2:
The system segments the temperature control into distinct zones: a cold reservoir for storing precursors and a warm feed unit for delivery. This segmentation allows each component to operate at its optimal temperature, preventing both condensation in the delivery system and thermal decomposition in the storage system.
3Stability of the object's composition
If the flow of precursor gas is increased to maintain constant deposition rate, then deposition rate stability is improved, but the likelihood of plasma discharge increases
Solution Approach 1:
The system uses periodic action by introducing precursors in pulsed or sequential manner rather than continuous flow. This periodic introduction maintains average deposition rate stability while reducing instantaneous gas flow levels, thereby minimizing plasma discharge risks.
Solution Approach 2:
The system dynamically adjusts precursor flow rates based on real-time process conditions. By using feedback control, the system maintains optimal deposition rates while adapting flow levels to prevent plasma discharge conditions, resolving the contradiction between stability and harmful effects.
4Measurement precision
If micro-valves are used for precise flow control, then flow control precision is improved, but device complexity increases
Solution Approach 1:
The system merges multiple valve functions into a single micro-valve unit that can sequentially control multiple precursor flows. This consolidation reduces the total number of valves needed while maintaining precise flow control through the shared micro-valve, balancing precision with reduced complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables immediate and constant control over precursor gas flow, reduces deposition rate variability, minimizes contamination risks, and maintains apparatus functionality by using micro-valves and cleaning mechanisms.
Implementation Method 1
each precursor reservoir (1002, 1003) has its own micro-valve (1021, 1022) for controlling the flow of the respective precursor
Implementation Method 2
a gaseous precursor substance is admitted into the object chamber... a layer of a substance is deposited on the surface of the object
Implementation Method 3
a gaseous precursor substance is admitted into the object chamber... a layer of a substance is deposited on the surface of the object
Implementation Method 4
provision is made for the line devices (L1, L2) and/or the feed unit (1001) to be heated
Implementation Method 5
By means of a gas feed device, a gaseous state of a precursor substance-a so—called precursor—can be admitted into the object chamber... a layer of a substance is deposited on the surface of the object
Implementation Method 6
an electron beam (also referred to as primary electron beam below) is generated by means of a beam generator and focused onto an object
Data Source
AI summary
The system described herein relates to a gas feed device having a first precursor reservoir that receives a first precursor and having a second precursor reservoir that receives a second precursor, a feed unit that feeds a gaseous state of the first precursor and/or a gaseous state of the second precursor onto a surface of an object. A first line device is arranged between the first precursor reservoir and the feed unit. A second line device is arranged between the second precursor reservoir and the feed unit. A first valve is arranged between the first line device and the feed unit. A second valve is arranged between the second line device and the feed unit. A control valve for the feed of the gaseous state of the first precursor and/or the gaseous state of the second precursor is connected to the first valve, the second valve and the feed unit.