Focused Particle Beam Seed Layer for Sub-Micron Structures
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Solution Overview
Problem
Existing methods for forming microscopic structures are limited by photolithographic processes, which restrict minimum feature size and require numerous steps, making it difficult to achieve dimensions smaller than those available with lithographic techniques.
Innovation Solution
The method involves forming a patterned seed layer using a focused particle beam for direct milling or deposition, followed by thickening with Atomic Layer Deposition (ALD) or other techniques like Chemical Vapour Deposition (CVD), eliminating the need for lithography steps and enabling higher resolution and growth rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic processes are used to form patterned structures, then the process is well-established and can be implemented with standard equipment, but the minimum feature size is limited and cannot achieve dimensions below 1 μm
Solution Approach 1:
The patent replaces the mechanical photolithographic patterning system with a focused particle beam system (electron beam or ion beam) that directly writes patterns by inducing deposition or milling. This substitution enables resolution below 1 μm by using the focused beam's small spot size and direct writing capability, eliminating the diffraction limit of optical lithography while reducing the number of process steps through direct pattern formation.
Solution Approach 2:
The patent changes the fundamental patterning parameter from optical wavelength (in photolithography) to particle beam energy and focus (in EBID/IBID). By adjusting beam energy, focus, and scanning parameters, the system achieves sub-micron resolution directly, bypassing the need for multiple lithography and etching steps while maintaining manufacturing control.
2Manufacturing precision
If direct milling or deposition with focused particle beam is used, then high resolution below 1 μm is achieved, but the process is time-consuming for large volumes
Solution Approach 1:
The patent segments the structure formation into two distinct phases: (1) direct focused particle beam writing to create a high-resolution patterned seed layer at atomic precision, and (2) subsequent ALD thickening to rapidly build up the bulk material volume. This segmentation allows the slow, high-precision beam writing to be limited only to the thin seed layer, while the majority of the material volume is deposited rapidly by parallel ALD processes.
Solution Approach 2:
The patent performs preliminary action by first creating a thin patterned seed layer with the focused particle beam that defines the exact pattern and location. This preliminary patterned seed layer then serves as a template for the subsequent rapid ALD thickening, allowing the final structure to inherit the high resolution of the beam-written pattern while achieving bulk volumes through fast chemical vapor deposition.
3Ease of manufacture
If multiple lithography and etching steps are used, then the process follows established manufacturing workflows, but the number of steps increases and reduces productivity
Solution Approach 1:
The patent merges the patterning and seed layer formation steps into a single direct writing operation using focused particle beam-induced deposition or milling. This consolidation eliminates the separate photolithography, development, and etching steps that traditionally formed the pattern, reducing the number of process steps while maintaining ease of manufacture through integration into a single instrument.
Solution Approach 2:
The focused particle beam system serves multiple functions: it acts as the patterning tool, the seed layer formation tool, and the alignment reference source all in one step. This multi-functionality replaces the sequence of specialized tools required in photolithography (lithography tool, etching tool, alignment system), simplifying the manufacturing workflow while improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of structures with dimensions below 1 μm, combining high resolution with efficient growth rates and reducing the complexity of the process, while maintaining high purity and uniformity of the deposited material.
Implementation Method 1
depositing the seed layer with beam induced deposition, e.g. Electron Beam Induced Deposition (EBID) or Ion Beam Induced Deposition (IBID)
Implementation Method 2
depositing the seed layer with beam induced deposition, e.g. Electron Beam Induced Deposition (EBID) or Ion Beam Induced Deposition (IBID)
Implementation Method 3
such milling and deposition techniques with charged particle beams are capable of resolutions of between 1-10 nm
Implementation Method 4
Atomic Layer Deposition (ALD) is used to thicken the layer by the cyclic admission of fluids to a typical thickness of the resulting structure ranged from 2.5 to 100 nm
Data Source
AI summary
The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapor Deposition, a high quality layer can be grown.An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.