Particle Removal via Activated Oxygen and Hydrogen Gas Mixture
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Solution Overview
Problem
Conventional substrate processing apparatuses using ALD technology face challenges in performing both film deposition and etching in a single vacuum chamber, resulting in insufficient film quality after etching, with fluorine components often remaining on the surface and generating particles that roughen the film.
Innovation Solution
A particle removal method involving the supply of a mixed gas of activated oxygen-containing gas and hydrogen gas to the etched film, which is implemented in a substrate processing apparatus configured with specific gas discharge and supply units to enhance film quality and reduce surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If fluorine-containing gas is used for etching, then etching capability is improved, but fluorine components remain on the film surface causing particles and roughness
Solution Approach 1:
The patent converts the harmful residual fluorine components into beneficial HF gas by introducing hydrogen gas that reacts with the fluorine. This transforms the contamination problem into a controlled chemical reaction that removes the harmful substances while maintaining the etching benefits.
Solution Approach 2:
The patent changes the chemical environment by introducing hydrogen gas to alter the reaction products. By changing the gas composition parameters (adding H2 to the chamber), the residual fluorine is converted from a harmful contaminant into removable HF gas, thereby improving surface quality without sacrificing etching performance.
2Manufacturing precision
If hydrogen gas is supplied to react with fluorine components, then particle formation is reduced, but additional gas supply complexity increases
Solution Approach 1:
The hydrogen gas supply system serves multiple functions: it acts as a carrier gas during etching, provides hydrogen to react with residual fluorine components, and facilitates particle removal. This multi-functionality reduces the need for separate specialized systems for each function.
Solution Approach 2:
The hydrogen gas automatically reacts with the fluorine components that are already present on the film surface after etching. The system uses the existing fluorine contamination to drive the beneficial reaction, eliminating the need for additional complex particle removal equipment or processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces particles on the etched film surface, improving film quality by removing residual fluorine components and enhancing surface smoothness, allowing for both etching and particle removal to be performed sequentially in the same vacuum chamber.
Implementation Method 1
a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film
Implementation Method 2
activated oxygen-containing gas
Data Source
AI summary
A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.