Partition Fence Shielding Layer SIP Module EMI Isolation
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Solution Overview
Problem
Semiconductor devices in SIP modules face challenges with electromagnetic interference (EMI) and radio frequency interference (RFI) due to high-speed switching and inter-device coupling, which current shielding methods struggle to effectively isolate, especially requiring additional processing steps for ground paths through internal barriers.
Innovation Solution
A shielding layer is formed in direct contact with a partition fence around semiconductor components in the SIP module, using conductive materials like Al, Cu, or carbonyl iron, which provides both physical and electrical isolation, reducing EMI and RFI by compartmentalizing semiconductor die and discrete IPDs, and simplifying the manufacturing process by eliminating the need for additional processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an internal barrier is formed in the encapsulant between semiconductor die and discrete IPDs, then inter-device EMI and RFI isolation is improved, but additional processing steps (drilling or etching) and separate electrical interconnect are required for ground path connection
Solution Approach 1:
The patent merges the shielding layer and ground path connection by forming the shielding layer in direct contact with the partition fence, which is electrically connected to ground. This eliminates the need for separate electrical interconnect through the encapsulant, combining the EMI shielding function with the ground connection function into a single integrated structure.
Solution Approach 2:
The patent extracts the ground connection requirement from the encapsulant material and relocates it to the partition fence structure. By forming the shielding layer directly on the partition fence that extends to the substrate, the ground path is established through the fence itself rather than requiring separate vias or traces through the encapsulant.
2Productivity
If multiple semiconductor die and discrete IPDs are integrated into an SIP module, then higher density and extended electrical functionality are achieved, but susceptibility to EMI, RFI, and inter-device interference increases
Solution Approach 1:
The patent segments the SIP module into isolated compartments using partition fences that extend from the substrate through the encapsulant. These fences create separate shielded regions around different semiconductor components, allowing high-density integration while preventing electromagnetic interference between adjacent devices through the compartmentalized structure.
3Object-affected harmful factors
If a shielding layer is formed over the encapsulant to isolate sensitive circuits, then EMI protection is improved, but the electrical connection to ground through the encapsulant requires additional processing steps
Solution Approach 1:
The patent merges the shielding layer formation with the ground connection establishment by positioning the shielding layer in direct contact with the partition fence. The partition fence serves dual purposes: providing the ground reference for the shielding layer and establishing the electrical connection to ground through its connection to the substrate, eliminating the need for separate ground vias through the encapsulant.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces cross-talk and interference between semiconductor components, enhancing isolation properties and reducing manufacturing costs by simplifying the electrical connection between the shielding layer and partition fence, thereby improving the operational reliability and efficiency of SIP modules.
Implementation Method 1
A shielding layer is formed over the encapsulant to isolate sensitive circuits
Implementation Method 2
using conductive materials like Al, Cu, or carbonyl iron
Data Source
AI summary
A semiconductor device has a partition fence disposed between a first attach area and a second attach area on a substrate. A first electrical component is disposed over the first attach area. A second electrical component is disposed over the second attach area. The partition fence extends above and along a length of the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and partition fence. A portion of the encapsulant is removed to expose a surface of the partition fence and planarizing the encapsulant. A shielding layer is formed over the encapsulant and in contact with the surface of the partition fence. The combination of the partition fence and shielding layer compartmentalize the first electrical component and second electrical component for physical and electrical isolation to reduce the influence of EMI, RFI, and other inter-device interference.