Partition Plate Separates Plasma and Substrate Spaces for MRAM Etching
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Solution Overview
Problem
Existing substrate processing methods for manufacturing MRAM devices face challenges in properly removing reaction products generated during etching, particularly metal-containing layers, as the use of plasma-reactive gases can lead to incomplete removal of conductive by-products, including metal oxides and halides, which can cause oxidation and hinder the process.
Innovation Solution
A substrate processing apparatus with a partition plate that separates the plasma generating space from the substrate processing space, allowing only radicals generated from a first processing gas to interact with reaction products while preventing ions and ultraviolet rays, and a second processing gas is supplied to react with the reaction products without being exposed to plasma, ensuring effective removal of etching by-products.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma is used to generate reactive gases for removing reaction products, then the removal efficiency is improved, but the reaction products may not be removed properly due to incomplete removal of conductive by-products
Solution Approach 1:
The processing chamber is divided into two distinct spaces: a plasma generating space where plasma is created, and a substrate processing space where the substrate is treated. This segmentation allows plasma to be generated without directly exposing the substrate to it, enabling controlled interaction between reaction products and processing gases.
Solution Approach 2:
A partition plate is introduced as an intermediary component between the plasma generating space and the substrate processing space. This partition plate allows selective transmission of species while blocking others, mediating the interaction between plasma-generated reactive species and the substrate surface.
2Reliability
If a partition plate is introduced to separate plasma generating space from substrate processing space, then proper removal of reaction products is achieved, but the device complexity increases
Solution Approach 1:
The partition plate is designed with spatially varying properties: it allows passage of neutral radicals while blocking ions and vacuum ultraviolet rays. This local quality differentiation enables selective transmission of specific species to achieve the desired chemical reactions while protecting the substrate from harmful plasma effects.
3Productivity
If the substrate is exposed to plasma during reaction product removal, then removal efficiency is improved, but oxidation of metal-containing layers occurs
Solution Approach 1:
By separating the plasma generating space from the substrate processing space, the substrate is protected from direct plasma exposure that would cause oxidation, while still benefiting from the reactive species needed for effective removal of reaction products.
Solution Approach 2:
The substrate processing space maintains an inert or controlled atmosphere environment, preventing oxidation of metal-containing layers while allowing controlled chemical reactions with processing gases to remove reaction products effectively.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the proper removal of reaction products, including metal oxides and halides, by utilizing radicals to convert them into substances easily reactable with the second processing gas, thereby preventing new reaction products formation and ensuring consistent vacuum reactions.
Implementation Method 1
a partition plate which is disposed in the processing chamber and partitions the space into a plasma generating space and a substrate processing space, the partition plate being configured to suppress transmission of ions and vacuum ultraviolet rays
Implementation Method 2
a plasma source configured to generate a plasma in the plasma generating space
Implementation Method 3
a first processing gas supply unit configured to supply a first processing gas into the plasma generating space, the first processing gas to be dissociated by the plasma to generate radicals
Implementation Method 4
a second processing gas supply unit configured to supply a second processing gas into the substrate processing space, the second processing gas reacting with the reaction products without being exposed to the plasma
Data Source
AI summary
An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.