Partitioned Substrate Processing Chamber for Gas Diffusion Control
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Solution Overview
Problem
Existing substrate processing apparatuses suffer from inefficient use of processing gas due to diffusion across the partition wall, leading to reduced etching rates and increased consumption, particularly when etching metal films, as the gas pressure and concentration decrease, necessitating longer processing times and higher costs.
Innovation Solution
A substrate processing apparatus with a partition wall that can be raised and lowered, featuring separate gas suppliers for the inner and outer sides, maintaining distinct gas environments by using inert gases to control pressure differentials and minimize gas diffusion, thereby concentrating processing gas within the inner space.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a partition wall is provided to separate processing gas, then processing gas concentration is improved in the inner space, but gas diffusion to the outer space occurs reducing efficiency
Solution Approach 1:
A third gas supply unit introduces a third gas (inert gas such as nitrogen or argon) into the outer space between the partition wall and substrate. This third gas acts as an intermediary barrier that prevents processing gas from diffusing into the outer space, thereby maintaining high processing gas concentration in the inner space while reducing gas diffusion loss.
2Productivity
If processing gas is supplied to inner space, then etching rate is improved, but gas pressure decreases due to diffusion
Solution Approach 1:
The third gas supply unit introduces inert gas into the outer space, creating a pressure barrier that prevents processing gas diffusion. This maintains higher processing gas pressure in the inner space, ensuring sufficient etching rate without gas loss to the outer space.
3Quantity of substance
If partition wall is used to contain processing gas, then gas concentration is maintained, but gas flows to outer space through communication
Solution Approach 1:
By introducing a third gas (inert gas) into the outer space, a concentration gradient is created that acts as a barrier to processing gas diffusion. This intermediary gas layer prevents processing gas from flowing into the outer space, thereby reducing substance loss while maintaining high processing gas concentration in the inner space.
4Reliability
If processing time is extended to compensate for gas diffusion, then etching completeness is improved, but productivity decreases
Solution Approach 1:
The third gas supply unit creates a barrier that prevents processing gas diffusion, maintaining high processing gas concentration and pressure in the inner space. This enables complete etching to be achieved in shorter processing time, thereby improving productivity without sacrificing etching completeness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances etching efficiency by maintaining high gas concentration and pressure within the inner space, reducing processing time and gas consumption, especially for expensive gases, thus improving productivity and cost-effectiveness.
Implementation Method 1
maintaining distinct gas environments by using inert gases to control pressure differentials and minimize gas diffusion
Implementation Method 2
minimize gas diffusion
Data Source
AI summary
A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.