Partitioned Gas Supply in Substrate Processing for Faster Etching
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Solution Overview
Problem
Existing substrate processing apparatuses suffer from inefficient use of processing gas due to diffusion between inner and outer sides of the partition wall, leading to reduced etching rates and increased gas consumption, particularly when etching metal films.
Innovation Solution
A substrate processing apparatus with a partition wall that can be raised and lowered, featuring separate gas suppliers for inner and outer sides, maintaining distinct gas environments and suppressing gas flow between them, thereby increasing gas concentration and reducing consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas supply system is used for both inner and outer sides of the partition wall, then device complexity is reduced, but processing gas diffuses between inner and outer sides leading to reduced etching rates and increased gas consumption
Solution Approach 1:
The gas supply system is segmented into separate inner gas supply and outer gas supply pathways. The inner gas supply introduces processing gas into the inner side of the partition wall where the substrate is located, while the outer gas supply introduces gas into the outer side. This segmentation prevents mixing and diffusion of gases between the two regions, maintaining high processing gas concentration for effective etching while using distinct supply channels.
Solution Approach 2:
Different gas environments are provided for the inner and outer sides of the partition wall based on their specific functional requirements. The inner side receives processing gas at controlled concentrations optimized for etching the substrate, while the outer side receives a separate gas supply. This local differentiation ensures optimal etching performance in the inner region without compromising the overall system.
2Device complexity
If the partition wall is fixed in position, then device complexity is reduced, but adaptability to different processing configurations is limited
Solution Approach 1:
The partition wall is designed with movable capability, allowing it to be positioned at different locations within the processing chamber. This dynamic positioning enables adaptation to various substrate sizes, shapes, and processing configurations. The partition wall can be adjusted to optimize the separation between inner and outer gas regions for different processing scenarios, providing versatility without significantly increasing device complexity.
Data Source
AI summary
A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.