Parylene-HT Side-Wall Insulating Film for Through Electrodes
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Solution Overview
Problem
The use of silicon oxide as a side-wall insulating film for through electrodes in three-dimensional integrated circuits leads to poor thermomechanical reliability due to high-temperature processing, which induces stress from thermal expansion differences between copper and semiconductor substrates, and requires a barrier layer to prevent copper diffusion, complicating electrical reliability and increasing manufacturing costs.
Innovation Solution
A through electrode with a Parylene-HT film as the side-wall insulating film, which eliminates the need for a barrier layer and is formed at low temperatures, providing mechanical and electrical reliability by reducing stress and capacitive coupling, and allowing for dense, reliable three-dimensional packaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide film is used as a side-wall insulating film, then insulation is provided, but a barrier layer must be added to prevent copper diffusion to silicon substrate, increasing device complexity and manufacturing steps
Solution Approach 1:
The organic low-dielectric constant material performs multiple functions simultaneously: it provides electrical insulation as the side-wall insulating film and acts as a diffusion barrier to prevent copper migration to the silicon substrate, eliminating the need for a separate barrier layer
Solution Approach 2:
The patent merges the insulating function and barrier function into a single organic low-dielectric constant material layer, consolidating two previously separate layers (insulating film and barrier layer) into one multi-functional layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Parylene-HT film ensures adhesiveness and stress release, reduces signal delay and crosstalk, and eliminates the need for a barrier layer, enhancing the thermomechanical reliability and electrical performance of through electrodes while simplifying the manufacturing process and reducing costs.
Implementation Method 1
forming a side-wall insulating film represented by the following chemical formula (1) so as to coat an inner wall of the through hole
Implementation Method 2
large stress is induced by thermal load due to a large difference in thermal expansion rate between copper making up the through electrode and a semiconductor substrate
Implementation Method 3
a barrier layer has to be provided to prevent diffusion of copper to a semiconductor substrate
Data Source
AI summary
Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).