Parylene Passivation Layer for Micro-LED Electrode Transfer Protection

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In the fabrication of micro light emitting diode (LED) display apparatus using micro-unit LED chips, the electrodes are exposed during transfer, leading to physical and chemical damage due to the external environment, which is not effectively addressed by existing methods.

Innovation Solution

A semiconductor device with a passivation layer, specifically using parylene, is introduced to cover the electrodes, preventing physical and chemical damage during the transfer process, and the passivation layer is designed to be non-reactive with electrolytes and easily removable for bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If electrodes are exposed during transfer process, then transfer efficiency is improved, but electrode reliability deteriorates due to physical and chemical damage

Engineering Contradiction:
Improvetransfer efficiencyVSAvoidelectrode reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A passivation layer is formed over the electrodes before the transfer process to protect them from physical and chemical damage. This preliminary protective action allows the electrodes to be transferred in a protected state, resolving the contradiction between transfer efficiency and electrode reliability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The passivation layer acts as an intermediary between the electrodes and the external environment during transfer. It mediates the interaction by providing chemical resistance and physical protection, enabling safe transfer without direct exposure of electrodes to harmful environments.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If passivation layer is added to protect electrodes, then electrode reliability is improved, but device complexity increases

Engineering Contradiction:
Improveelectrode protectionVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A thin film passivation layer is applied over the electrodes to provide protection without significantly increasing structural complexity. The thin film approach maintains device simplicity while delivering the required electrode protection during transfer operations.

Inventive Principle:
Principle #30Flexible shells and thin films

3Object-affected harmful factors

If passivation layer covers electrodes, then chemical resistance is improved, but manufacturing complexity increases due to additional coating steps

Engineering Contradiction:
Improvechemical resistanceVSAvoidmanufacturing simplicity
Core Design Contradiction:
Object-affected harmful factorsVSEase of manufacture

Solution Approach 1:

The passivation layer is formed by controlling deposition parameters to achieve the desired thickness and chemical resistance properties. By optimizing deposition parameters, the layer provides adequate chemical protection while minimizing the impact on manufacturing simplicity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The passivation layer effectively protects the electrodes from damage during fluid self-assembly, enhancing the reliability of the electronic apparatus and facilitating the transfer process by preventing galvanic corrosion and physical scratches.

Implementation Method 1

The passivation layer may include a material that does not chemically react with an electrolyte

Methodology Applied
Scientific EffectChemical resistance:

Implementation Method 2

The separating of the plurality of semiconductor device layers from the semiconductor substrate may be performed by immersing the semiconductor substrate in a potassium hydroxide (KOH) solution

Methodology Applied
Scientific EffectChemical etching:

Implementation Method 3

The passivation layer may be removed by using an oxygen (02) plasma treatment

Methodology Applied
Scientific EffectPlasma treatment: Plasma

Data Source

PatentUS20230361251A1Semiconductor device including passivation layer and method of fabricating electronic apparatus
Publication Date: 2023.11.09 SAMSUNG ELECTRONICS CO LTD
  • US20230361251A1 patent drawing
  • US20230361251A1 patent drawing
  • US20230361251A1 patent drawing

AI summary

Provided are a semiconductor device including a passivation layer and a method of fabricating an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor device layer including at least one electrode provided at an upper portion thereof and a passivation layer at least partially covering the at least one electrode.