Pass Transistor Circuit with Nonvolatile Memory Function

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Solution Overview

Problem

Conventional switching box circuits using SRAMs for memory in pass transistor circuits result in high power consumption, large circuit size, and volatility, hindering high integration and efficient power management.

Innovation Solution

Integration of nonvolatile spin MOSFETs or MTJ devices in pass transistor circuits, which provide memory functionality without the need for continuous power supply, allowing for a smaller device count and reduced power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If SRAMs are used as memories in pass transistor circuits, then information can be stored and retrieved, but power consumption becomes large due to leakage current

Engineering Contradiction:

Improvememory information storageVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the fundamental parameter of memory volatility by replacing volatile SRAM with nonvolatile memory devices (spin MOSFETs or MTJ devices). This parameter change allows the memory to retain information without continuous power supply, eliminating leakage current consumption while maintaining storage functionality.

Inventive Principle:

Principle #35Parameter changes

2Adaptability or versatility

If a large number of pass transistor circuits are used in switching box circuits, then reconfigurable logic functions are achieved, but circuit size becomes extremely large

Engineering Contradiction:

Improvereconfigurable logic functionVSAvoidcircuit size

Core Design Contradiction:

Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent merges the memory function and pass transistor switching function into a single integrated circuit unit. By combining these previously separate components, the circuit achieves reconfigurable logic functions with significantly reduced area compared to using separate memory and pass transistor circuits.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The pass transistor circuit with memory function serves multiple purposes: it acts as both a memory element for storing connection states and as a switching element for determining signal line connections. This multi-functionality reduces the overall number of components needed in the switching box circuit.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If SRAMs are used as volatile memories, then information can be stored during operation, but information is lost when power supply is cut off requiring external memory

Engineering Contradiction:

Improveinformation retention during operationVSAvoidexternal memory requirement

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the volatility parameter of the memory from volatile (SRAM) to nonvolatile (spin MOSFET or MTJ device). This allows the circuit to retain information even when power is cut off, eliminating the need for external memory and reducing system complexity.

Inventive Principle:

Principle #35Parameter changes

4Ease of operation

If SRAMs are used in pass transistor circuits, then switching function is achieved, but the number of devices becomes large hindering high integration

Engineering Contradiction:

Improveswitching functionVSAvoidnumber of devices

Core Design Contradiction:

Ease of operationVSDevice complexity

Solution Approach 1:

The patent combines the memory function and pass transistor switching function into a single integrated unit. This merging reduces the total number of devices from what would be required for separate memory and switching components, enabling high integration in the switching box circuit.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of nonvolatile spin MOSFETs or MTJ devices enables a compact, low-power switching box circuit with memory functionality, allowing for highly integrated reconfigurable logic circuits with reduced power consumption and no need for continuous power supply.

Implementation Method 1

spin electronics devices utilizing the spin freedom of electrons

Methodology Applied

Scientific EffectSpin freedom of electrons:

Implementation Method 2

Active research and development based on the tunnel magnetoresistance (TMR) effects

Methodology Applied

Scientific EffectTunnel magnetoresistance (TMR) effects: Magnetoresistance

Data Source

PatentUS8405443B2Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit

Publication Date: 2013.03.26 KK TOSHIBA

AI summary

A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.