Passivated Contact Structure With Thinned Oxide for H Passivation
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Solution Overview
Problem
The existing passivated contact structures in solar cells suffer from poor hydrogen passivation effects due to thick silicon oxide layers, which complicate heat treatment control processes.
Innovation Solution
A passivated contact structure with a first silicon oxide layer featuring a thinned region where the silicon oxide content is reduced, allowing hydrogen to pass through quickly, and a second silicon dioxide layer with controlled thickness to facilitate effective passivation and simplify heat treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick silicon oxide layer is used in the passivated contact structure, then the isolation effect is improved, but heat treatment control difficulty increases
Solution Approach 1:
By segmenting the first silicon oxide layer into thinned and non-thinned regions, the structure achieves both isolation and hydrogen passivation functions, thereby simplifying the heat treatment control process. The thinned region enables effective hydrogen passivation at lower temperatures, reducing the complexity of heat treatment control while maintaining isolation through the non-thinned region
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure enhances hydrogen passivation and reduces the complexity of heat treatment processes, improving efficiency and performance.
Implementation Method 1
the thinning of the local region of the first silicon oxide layer allows H to quickly pass through
Data Source
Figure 1
Figure 2~3
AI summary
The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.