Passivation-Assisted Dual-Material Deposition on Adjacent Surfaces
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Solution Overview
Problem
Current manufacturing processes for integrated circuits require multiple steps to selectively deposit different materials on different surfaces of a semiconductor substrate, which is time-consuming and inefficient.
Innovation Solution
A method involving a single vapor deposition process that uses passivation agents and sequential exposure to metal or semimetal reactants to selectively deposit different materials on different surfaces of a substrate, utilizing ALD-type processes to achieve selective and simultaneous deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple sequential deposition and etching steps are used to deposit different materials on different surfaces, then material selection precision is improved, but processing time increases
Solution Approach 1:
The process segments the deposition operations by introducing a passivation layer that selectively blocks one surface while allowing deposition on the other surface. This segmentation enables simultaneous but selective material deposition on different surfaces through a single vapor phase process, eliminating the need for multiple sequential deposition and etching steps
Solution Approach 2:
A passivation layer is introduced as an intermediary substance that selectively adheres to one surface while allowing vapor phase reactants to access the other surface. This intermediary enables selective deposition without requiring multiple process steps, as the passivation layer acts as a temporary protective barrier that can be removed afterward
2Manufacturing precision
If separate deposition steps are used for each material, then deposition selectivity is improved, but device complexity increases
Solution Approach 1:
The process merges multiple deposition operations into a single vapor phase deposition step by using a passivation layer to achieve selectivity. Instead of performing separate deposition steps for each material with intermediate etching and masking, the passivation layer enables both materials to be deposited simultaneously in one process, reducing overall process complexity
3Manufacturing precision
If multiple process steps are used for selective deposition, then material purity is improved, but productivity decreases
Solution Approach 1:
The process achieves continuous useful action by performing selective deposition on both surfaces simultaneously within a single vapor phase deposition cycle. The passivation layer remains in place throughout the deposition process, allowing uninterrupted deposition on the exposed surface while the other surface is protected, thereby eliminating idle time between sequential operations and improving manufacturing throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces processing time by eliminating the need for separate deposition and etching steps, allowing for the formation of materials with distinct properties such as etch rate, conductivity, and refractive index on specific surfaces.
Implementation Method 1
exposing the first and second surfaces to a passivation agent, such that the passivation agent selectively forms a passivation layer on the first surface relative to the second surface
Implementation Method 2
A method involving a single vapor deposition process that uses passivation agents and sequential exposure to metal or semimetal reactants to selectively deposit different materials on different surfaces of a substrate
Data Source
AI summary
In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.